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    G8370-10

    Abstract: KIRD1058E01 SE-171
    Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.


    Original     		PDF G8370-10 SE-171 KIRD1058E01 G8370-10 KIRD1058E01

    G8370-10

    Abstract: KIRD1058E01 SE-171 photodiode InGaAs
    Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.


    Original     		PDF G8370-10 SE-171 KIRD1058E01 G8370-10 KIRD1058E01 photodiode InGaAs

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area φ10 mm Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ.


    Original     		PDF G8370-10 SE-171 KIRD1058E01