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    KEC KHB7D0N65F2UPF

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KEC KHB7D0N65P1UP

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KEC KHB7D0N80P1UP

    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA KHB7D0N80P1UP 50
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    KHB7D0N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB7D0N65F1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB7D0N65F2 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB7D0N65P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB7D0N65P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

    KHB7D0N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KHB7D5N60F1

    Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
    Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    PDF KHB7D5N60P1/F1/F2 KHB7D0N60P1 Fig15. Fig16. Fig17. KHB7D5N60F1 KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V

    KHB7D0N65F1

    Abstract: RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original
    PDF KHB7D0N65P1/F1/F2 KHB7D0N65P1 Fig15. Fig16. Fig17. KHB7D0N65F1 RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1

    khb7d0n65

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    PDF KHB7D0N65P1/F1/F2 KHB7D0N65P1 KHB7D0N65F1 KHB7D0N65F2 KHB7D0N65F1 khb7d0n65

    khb7D5N60F

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original
    PDF KHB7D5N60P1/F1/F2 KHB7D0N60P1 KHB7D5N60P1 dI/dt200A/, khb7D5N60F

    KHB7D0N80F1

    Abstract: KHB7D0N80F khb7d0n80 KHB7D0N80P1
    Text: SEMICONDUCTOR KHB7D0N80P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB7D0N80P1/F1 KHB7D0N80P1 KHB7D0N80F1 KHB7D0N80F khb7d0n80 KHB7D0N80P1

    KHB7D0N80F

    Abstract: KHB7D0N80P1 KHB7D0N80F1
    Text: SEMICONDUCTOR KHB7D0N80P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original
    PDF KHB7D0N80P1/F1 above25 dI/dt200A/, KHB7D0N80F KHB7D0N80P1 KHB7D0N80F1

    KHB7D0N

    Abstract: 11th
    Text: SEMICONDUCTOR KHB7D0N65P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking. 2. Marking KHB7D0N 65P 1 511 No. 2005. 11. 14 2 Item Marking Description Device Name KHB7D0N65P KHB7D0N65P Lot No. 511 Revision No : 0 5 Year 0~9 : 2000~2009 11


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    PDF KHB7D0N65P O-220AB KHB7D0N 11th

    KHB7D0N65F1

    Abstract: KHB7D0N65F RL46 KHB7D0N65P1
    Text: KHB7D0N65P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description KHB7D0N65P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original
    PDF KHB7D0N65P1/F1 KHB7D0N65P1 KHB7D0N65F1 KHB7D0N65F RL46 KHB7D0N65P1

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


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    PDF KHB7D0N65P1/F1/F2

    rl46

    Abstract: KHB7D0N65F KHB7D0N65F1 32nC KHB7D0N65P1 M/smd rl46
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original
    PDF KHB7D0N65P1/F1/F2 KHB7D0N65P1 dI/dt200A/, rl46 KHB7D0N65F KHB7D0N65F1 32nC KHB7D0N65P1 M/smd rl46

    7D0N65F

    Abstract: KHB 7d0n65f KHB7D0N65F1 KHB7D0N65F 7d0n65 TO-220IS khb*65f
    Text: SEMICONDUCTOR KHB7D0N65F1 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking. 2. Marking KHB 7D0N65F 515 1 1 2 No. Item 3 Marking Description KHB KHB 7D0N65F 7D0N65F Revision 1 1 Lot No. 515 Device Name 2006. 2. 6 Revision No : 0 5 Year


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    PDF KHB7D0N65F1 O-220IS 7D0N65F 7D0N65F KHB 7d0n65f KHB7D0N65F1 KHB7D0N65F 7d0n65 TO-220IS khb*65f

    7d0n65f

    Abstract: KHB 7d0n65f 7d0n65 KHB7D0N65F2 KHB7D0N65F
    Text: SEMICONDUCTOR KHB7D0N65F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 7D0N65F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB7D0N65F2 KHB7D0N65F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009


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    PDF KHB7D0N65F2 O-220IS 7D0N65F 7d0n65f KHB 7d0n65f 7d0n65 KHB7D0N65F2 KHB7D0N65F

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB7D0N80P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


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    PDF KHB7D0N80P1/F1

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    diagram LG LCD TV circuits

    Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management


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    PDF OD-523 OD-323 OD323-2-1 SC-76) OD-123FL OT-723 OT-23 OT-89 diagram LG LCD TV circuits schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic