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KEC KHB4D0N80P1UP N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 4A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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KHB4D0N80P1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KHB4D0N80P1		Korea Electronics	N CHANNEL MOS FIELD EFFECT TRANSISTOR		Original	PDF

KHB4D0N80P1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
"VDSS 800V" 40A mosfet Abstract: 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2 Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KHB4D0N80P1/F1/F2 KHB4D0N80P1 "VDSS 800V" 40A mosfet 800V 40A mosfet KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80P1 khb*4D0N80F2	PDF
Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KHB4D0N80P1/F1/F2	PDF
KHB4D0N80F2 Abstract: KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F2 KHB4D0N80F1 khb*4D0N80F2 KHB4D0N80P1 800V 40A mosfet A10150 "VDSS 800V" 40A mosfet	PDF
KHB4D0N80F Abstract: khb*4D0N80F2 KHB4D0N80F2 Contextual Info: SEMICONDUCTOR KHB4D0N80P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N80P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	KHB4D0N80P1/F1/F2 KHB4D0N80P1 KHB4D0N80F1 KHB4D0N80F1 KHB4D0N80F2 KHB4D0N80F khb*4D0N80F2 KHB4D0N80F2	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF