KHB011N40F1 Search Results

KHB011N40F1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KHB011N40F1		Korea Electronics	N CHANNEL MOS FIELD EFFECT TRANSISTOR		Original	PDF

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Catalog Datasheet	MFG & Type	PDF	Document Tags
KHB011N40F1 Abstract: No abstract text available Text: SEMICONDUCTOR KHB011N40F1 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 1 2 No. Item KHB 011N40F 515 3 Marking Description KHB KHB 011N40F 011N40F Revision 1 1 Lot No. 515 Device Name 2006. 2. 6 Revision No : 0 5 Year	Original	PDF	KHB011N40F1 O-220IS 011N40F KHB011N40F1
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	PDF	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
KHB011N40P1 Abstract: KHB011N40F1 Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB011N40P1/F1 KHB011N40P1 KHB011N40P1 KHB011N40F1
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB011N40P1/F1
KHB011N40F1 Abstract: KHB011N40F2 KHB011N40P1 Text: SEMICONDUCTOR KHB011N40P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB011N40P1/F1/F2 KHB011N40P1 Fig15. Fig16. Fig17. KHB011N40F1 KHB011N40F2 KHB011N40P1
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KHB011N40P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB011N40P1/F1/F2 KHB011N40P1 KHB011N40P1 dI/dt200A/,
KHB011N40P1 Abstract: No abstract text available Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and	Original	PDF	KHB011N40P1/F1 KHB011N40P1 KHB011N40P1