6.5kV IGBT
Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
Text: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)
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plc wiring home diagram wago
Abstract: WAGO 281 electronic passive components catalog proxy metal sensor, with coil oil pressure sender IC 555 timer bistable 750-8-12 PT100 temperature sensor class B bacn WAGO 734
Text: Modular I/O-System ETHERNET TCP/IP 750-342 Manual Technical description, installation and configuration Version 2.1.1 ii • General Copyright 2007 by WAGO Kontakttechnik GmbH & Co. KG All rights reserved. WAGO Kontakttechnik GmbH & Co. KG Hansastraße 27
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D-32423
D-32385
plc wiring home diagram wago
WAGO 281
electronic passive components catalog
proxy metal sensor, with coil
oil pressure sender
IC 555 timer bistable
750-8-12
PT100 temperature sensor class B
bacn
WAGO 734
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snmp MIB WAGO
Abstract: codesys 2.3 Manual plc wiring home diagram wago codesys 2.3 Manual dali EN61131T2 750532 750-465 WAGO 281 WAGO-IO-PRO WAGO 733
Text: Modular I/O-System ETHERNET TCP/IP 750-841 Manual Technical description, installation and configuration Version 1.2.1 ii • General Copyright 2007 by WAGO Kontakttechnik GmbH & Co. KG All rights reserved. WAGO Kontakttechnik GmbH & Co. KG Hansastraße 27
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D-32423
D-32385
snmp MIB WAGO
codesys 2.3 Manual
plc wiring home diagram wago
codesys 2.3 Manual dali
EN61131T2
750532
750-465
WAGO 281
WAGO-IO-PRO
WAGO 733
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Untitled
Abstract: No abstract text available
Text: Hauptübersicht | Unternehmen | Index Main Overview | Company | Index Vossloh-Schwabe Optoelectronic GmbH & Co. KG A New Lighting Experience A varied product range creates room for new ideas The company Vossloh-Schwabe Optoelectronic GmbH & Co. KG is part of Panasonic Lighting Europe
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BUSBAR calculation
Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal
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Axial fans
Abstract: No abstract text available
Text: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen
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KO-08/07-10
D-74673
D-78112
D-84030
Axial fans
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Centrifugal fans
Abstract: forward curved backward curved dual inlet single inlet
Text: 37777-7-8811 • KO-08/07-12’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut
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KO-08/07-12â
D-74673
D-78112
D-84030
Centrifugal fans
forward curved
backward curved
dual inlet
single inlet
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Eupec Power Semiconductors PHASE CONTROL THYRISTORS
Abstract: EUPEC DIODE
Text: Power Capability and Reliability of High Power Semiconductors D. Westerholt, eupec GmbH + Co KG, Am Schloßberg 10, D-91362 Pretzfeld, Germany G. Schmidt, eupec GmbH + Co KG, Am Schloßberg 10, D-91362 Pretzfeld, Germany H.-J. Schulze, Siemens Corporate Technology, Otto-Hahn-Ring 6, D-81730 München
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D-91362
D-81730
Eupec Power Semiconductors PHASE CONTROL THYRISTORS
EUPEC DIODE
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37P4
Abstract: NAVIGATION DM N25 GLIDE SLOPE ANTENNA SERIES 37P5 S41422 N252 Collins 37P-4 Types of Radar Antenna GLIDE two element dual frequency antenna 37P-5
Text: NAVIGATION DM N25 GLIDE SLOPE ANTENNA SERIES MECHANICAL ELECTRICAL SPECIFICATIONS Frequency Range VSWR DM N25-1 DM N25-2 DM N25-3 AT-983 Gain Polarization Impedance 329 – 335.3 MHz 5:1 3:1 3:1 0 dB Horizontal 50 Ohms Weight (0.23 kg) 8 oz (0.39 kg) 14 oz
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N25-1
N25-2
N25-3
AT-983)
37P4
NAVIGATION DM N25 GLIDE SLOPE ANTENNA SERIES
37P5
S41422
N252
Collins 37P-4
Types of Radar Antenna
GLIDE
two element dual frequency antenna
37P-5
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG High-Sensitive Unipolar Hall Effect Switch CYD9639 Applications Package Type Automotive brake pedal position detection Proximity detection Speed measurement Weak magnetic field applications Solid state switches etc. P/N: CYD9639-XX-X
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CYD9639
CYD9639-XX-X
CYD9639-PA-T
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Abstract: No abstract text available
Text: Technologies GmbH & Co. KG High-Sensitive Unipolar Hall Effect Switch CYD9636 Applications Package Type Automotive brake pedal position detection Proximity detection Speed measurement Weak magnetic field applications Solid state switches etc. P/N: CYD9636-XX-X
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CYD9636
CYD9636-XX-X
CYD9636-PA-T
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Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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THS119,
KSY14
KSY44
D-85464
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Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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KSY14
KSY44
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Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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CYSJ302C
THS119,
KSY14
KSY44
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology.
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CYSJ106C
D-85464
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CYSJ362A
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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THS119,
KSY14
KSY44
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,
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CYD3141E
CYD3141E
D-85464
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Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,
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CYD3141E
CYD3141E
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
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THS119,
KSY14
KSY44
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG High Sensitivity Hall Effect Latch CYD9611 Applications Package Type DC brushless motors CAM shaft sensors Magnetic Encoders Rotating Speed Measurement Home applications Home safety etc. Features 3.8V to 24V operation voltage High sensitivity
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CYD9611
CYD9611-PA-T
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Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD443H HALL-EFFECT SWITCH IC CYD443H Hall-effect switch integrated circuit for high temperature operating is based on Hall-effect principle and the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage
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CYD443H
CYD443H
D-85464
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kingBright LED
Abstract: No abstract text available
Text: CML Technologies GmbH & Co. KG Home About CML Products Product Catalog Media Center Contact Product details Product Search Article no . Markets Latest News 2010-06-15 Kingbright - New Catalog >> More details GO! Article: CML12BS Products LED products
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CML12BS
CML12BS
kingBright LED
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E Hall-effect switch integrated circuits is based on the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator, differential amplifier, Schmitt trigger and an
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CYD3141E
D-85464
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Yellow LED Kingbright
Abstract: No abstract text available
Text: CML Technologies GmbH & Co. KG Home About CML Products Product Catalog Media Center Contact Product details Product Search Article no . Markets Latest News 2010-06-15 Kingbright - New Catalog >> More details GO! Article: CML12YS Products LED products
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CML12YS
type12V,
CML12YS
Yellow LED Kingbright
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