KG TECHNOLOGIES Search Results

6.5kV IGBT

Abstract: IGBT Power Module siemens ag infineon igbt reliability siemens IGBT 600a eupec igbt 6500v igbt 6.5kv SiC IGBT High Power Modules, PCIM Hongkong Measurement of stray inductance for IGBT IGBT module FZ siemens igbt inverters
Contextual Info: 6.5kV IGBT-Modules Franz Auerbach Infineon Technologies Josef Georg Bauer (Siemens AG) Manfred Glantschnig (Infineon Technologies) Jürgen Göttert (eupec GmbH & Co KG) Martin Hierholzer (eupec GmbH & Co KG) Alfred Porst (Infineon Technologies) Daniel Reznik (Siemens AG)

plc wiring home diagram wago

Abstract: WAGO 281 electronic passive components catalog proxy metal sensor, with coil oil pressure sender IC 555 timer bistable 750-8-12 PT100 temperature sensor class B bacn WAGO 734
Contextual Info: Modular I/O-System ETHERNET TCP/IP 750-342 Manual Technical description, installation and configuration Version 2.1.1 ii • General Copyright 2007 by WAGO Kontakttechnik GmbH & Co. KG All rights reserved. WAGO Kontakttechnik GmbH & Co. KG Hansastraße 27

snmp MIB WAGO

Abstract: codesys 2.3 Manual plc wiring home diagram wago codesys 2.3 Manual dali EN61131T2 750532 750-465 WAGO 281 WAGO-IO-PRO WAGO 733
Contextual Info: Modular I/O-System ETHERNET TCP/IP 750-841 Manual Technical description, installation and configuration Version 1.2.1 ii • General Copyright 2007 by WAGO Kontakttechnik GmbH & Co. KG All rights reserved. WAGO Kontakttechnik GmbH & Co. KG Hansastraße 27

Contextual Info: Hauptübersicht | Unternehmen | Index Main Overview | Company | Index Vossloh-Schwabe Optoelectronic GmbH & Co. KG A New Lighting Experience A varied product range creates room for new ideas The company Vossloh-Schwabe Optoelectronic GmbH & Co. KG is part of Panasonic Lighting Europe

BUSBAR calculation

Abstract: BUSBAR calculation datasheet calculation of IGBT snubber 3 level inverter 3 phase motor inverters circuit diagram igbt 3 phase inverters circuit diagram igbt DC Link capacitor calculation design dc link inverter IGBT inverter calculation inductances types
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Design Aspects for Inverters with IGBT High Power Modules Dr.-Ing. Th. Schütze, eupec GmbH & Co KG, Warstein, Germany Abstract With regard to the blocking ability and efficiency of the new 3.3 kV IGBT high voltage modules IHV with nominal

Axial fans

Contextual Info: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen

Centrifugal fans

Abstract: forward curved backward curved dual inlet single inlet
Contextual Info: 37777-7-8811 • KO-08/07-12’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut

Eupec Power Semiconductors PHASE CONTROL THYRISTORS

Abstract: EUPEC DIODE
Contextual Info: Power Capability and Reliability of High Power Semiconductors D. Westerholt, eupec GmbH + Co KG, Am Schloßberg 10, D-91362 Pretzfeld, Germany G. Schmidt, eupec GmbH + Co KG, Am Schloßberg 10, D-91362 Pretzfeld, Germany H.-J. Schulze, Siemens Corporate Technology, Otto-Hahn-Ring 6, D-81730 München

37P4

Abstract: NAVIGATION DM N25 GLIDE SLOPE ANTENNA SERIES 37P5 S41422 N252 Collins 37P-4 Types of Radar Antenna GLIDE two element dual frequency antenna 37P-5
Contextual Info: NAVIGATION DM N25 GLIDE SLOPE ANTENNA SERIES MECHANICAL ELECTRICAL SPECIFICATIONS Frequency Range VSWR DM N25-1 DM N25-2 DM N25-3 AT-983 Gain Polarization Impedance 329 – 335.3 MHz 5:1 3:1 3:1 0 dB Horizontal 50 Ohms Weight (0.23 kg) 8 oz (0.39 kg) 14 oz

Contextual Info: Technologies GmbH & Co. KG High-Sensitive Unipolar Hall Effect Switch CYD9639 Applications Package Type Automotive brake pedal position detection Proximity detection Speed measurement Weak magnetic field applications Solid state switches etc. P/N: CYD9639-XX-X

Contextual Info: Technologies GmbH & Co. KG High-Sensitive Unipolar Hall Effect Switch CYD9636 Applications Package Type Automotive brake pedal position detection Proximity detection Speed measurement Weak magnetic field applications Solid state switches etc. P/N: CYD9636-XX-X

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology.

CYSJ362A

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E series Hall-effect switch integrated circuits for high temperature operating based on Hall-effect principle, apply the semiconductor monolithic technology, which includes a voltage regulator,

Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Contextual Info: Technologies GmbH & Co. KG High Sensitivity Hall Effect Latch CYD9611 Applications Package Type DC brushless motors CAM shaft sensors Magnetic Encoders Rotating Speed Measurement Home applications Home safety etc. Features 3.8V to 24V operation voltage High sensitivity

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD443H HALL-EFFECT SWITCH IC CYD443H Hall-effect switch integrated circuit for high temperature operating is based on Hall-effect principle and the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage

kingBright LED

Contextual Info: CML Technologies GmbH & Co. KG Home About CML Products Product Catalog Media Center Contact Product details Product Search Article no . Markets Latest News 2010-06-15 Kingbright - New Catalog >> More details GO! Article: CML12BS Products LED products

Contextual Info: ChenYang Technologies GmbH & Co. KG CYD3141E SERIES HALL-EFFECT SWITCH IC CYD3141E Hall-effect switch integrated circuits is based on the semiconductor monolithic technology, which includes a voltage regulator, Hall voltage generator, differential amplifier, Schmitt trigger and an

Yellow LED Kingbright

Contextual Info: CML Technologies GmbH & Co. KG Home About CML Products Product Catalog Media Center Contact Product details Product Search Article no . Markets Latest News 2010-06-15 Kingbright - New Catalog >> More details GO! Article: CML12YS Products LED products