CYSJ106C Search Results
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Contextual Info: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. |
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CYSJ106C D-85464 | |
CYSJ106CContextual Info: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output. |
Original |
CYSJ106C D-85464 | |
CYSJ106C
Abstract: 2X100
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Original |
CYSJ106C D-85464 2X100 |