Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : TFSC. Low forward voltage. C D Fast reverse recovery time. Small total capacitance. DIM A B C D E F B A MAXIMUM RATING Ta=25
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KDS160F
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KDS160
Abstract: marking UF
Text: SEMICONDUCTOR KDS160 MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking UF 0 1 2 1 No. Item Marking Description Device Mark UF KDS160 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KDS160
KDS160
marking UF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES 2013. 1. 3 Revision No : 1 1/2
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KDS160F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. K L H F ・Fast Reverse Recovery Time. A ・Low Forward Voltage. 1 E ・Small Package : USC. G B CATHODE MARK FEATURES ・Small Total capacitance. 2
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KDS160
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Total capacitance. G 1 G ・Fast Reverse Recovery Time. E C A ・Low Forward Voltage. B CATHODE MARK ・Small Package : ESC. 2 D F
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KDS160E
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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KDS160
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2
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KDS160
KDS160
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F Fast Reverse Recovery Time. A Low Forward Voltage. 1 E Small Package : USC. G B CATHODE MARK FEATURES Small Total capacitance. 2 J D C I MAXIMUM RATING Ta=25
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KDS160
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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KDS160E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking UF No. 2005. 7. 18 Item Marking Description Device Mark UF KDS160E Revision No : 0 1/1
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KDS160E
KDS160E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : VSC. Low forward voltage. C D 1 2 Fast reverse recovery time. Small total capacitance. B DIM A B C D E F A MAXIMUM RATING Ta=25
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KDS160V
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KDS160E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌFast Reverse Recovery Time. ᴌSmall Total capacitance. E 1 A ᴌLow Forward Voltage. C B CATHODE MARK ᴌSmall Package : ESC. 2 D F MAXIMUM RATING Ta=25ᴱ
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KDS160E
KDS160E
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KDS160
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ・Fast Reverse Recovery Time. A ・Low Forward Voltage. 1 E ・Small Package : USC. G B CATHODE MARK FEATURES ・Small Total capacitance. 2
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KDS160
KDS160
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KDS160F
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160F TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small package : TFSC. ・Low forward voltage. ・Fast reverse recovery time. ・Small total capacitance. MAXIMUM RATING Ta=25℃ CHARACTERISTIC
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KDS160F
100mA
KDS160F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. E C 1 A Small Package : ESC. B CATHODE MARK FEATURES 2 D F MAXIMUM RATING Ta=25
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KDS160E
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KDS160
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. L K H F ᴌFast Reverse Recovery Time. A ᴌLow Forward Voltage. 1 E ᴌSmall Package : USC. G B CATHODE MARK FEATURES ᴌSmall Total capacitance. 2
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KDS160
KDS160
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amoled
Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
Text: Block Function For Recommended Item Switching Diode / SBD KDS160F/V/E, KDS12□V/E, KDR7□0F/V/E MOSFET POWER KMA2D4P20S, KMA2D3P20S ZENER KDZ33EV BRT KRA3□□V/E MOSFET AUDIO MUTING MIC DISPLAY KMA2D4P20S, KMA2D3P20S BRT KRC28□U (KRC2□□S, KRC68□T)
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KDS160F/V/E,
KDS12V/E,
KDR70F/V/E
KMA2D4P20S,
KMA2D3P20S
KDZ33EV
KRC28U
KRC68T)
amoled
12 mosfet sot23
SMFB14
KUSB50QN
pg05fsesc
PG24EBUSC
KDZ33EV
KIB3461QN
KIB3462QN
KMA2D3P20S
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KDS160E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast Reverse Recovery Time. Small Total capacitance. 1 A Low Forward Voltage. E C B CATHODE MARK Small Package : ESC. 2 D MAXIMUM RATING Ta=25
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KDS160E
KDS160E
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KDS160V
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES CATHODE MARK Small package : VSC. Low forward voltage. C D 1 2 Fast reverse recovery time. Small total capacitance. B DIM A B C D E F A MAXIMUM RATING Ta=25
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KDS160V
KDS160V
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KDS160V
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS160V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking UF No. 2005. 12. 29 Item Marking Description Device Mark UF KDS160V Revision No : 0 1/1
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KDS160V
KDS160V
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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KDS160E
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KDS160E S il ic o n e p i t a x i a l p l a n a r t y p e d i o d e ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package : ESC. Low Forw ard Voltage. F ast Reverse Recovery Time. Small Total capacitance.
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KDS160E
100mA
KDS160E
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KDS160
Abstract: No abstract text available
Text: K EG KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KDS160 SILICON EPITAXIAL PLANAR TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • • • • Small Package : USC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance.
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KDS160
100mA
KDS160
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