KD 503 TRANSISTOR Search Results

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

transistor KD 503

Abstract: kd 503 transistor MRF466 2N5941 MRF-466
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF466 T h e R F Line 4 0 W P E P NPN SILICON RF POWER TRANSISTOR RF PO W E R T R A N S IS T O R . designed p rim a rily for applications as a hig h -p ow e r a m p lifie r from 2.0 to 30 MHz, in single sideband m obile, m arine and base

TESLA KU 602

Abstract: TESLA KU 601 tesla ku 611 kd 501 KD 3055 vergleichsliste DDR kd 616 tungsram UNITRA vergleichsliste
Contextual Info: r electronic Vergleichsliste Silizium-Leistungstransistoren 1 Vorwort» Die Verglcich8jiatc Silizium - Leistungstransistoren wurde in erste: Linie als Arbeitsmaterial fuer die Applikationsorgane unseres Kombinates zusanmengestellt. Um das Hauptziel dic.aer Liste - NSW - Bauelemente

Contextual Info: h ~p > y X $ / I ransistors 2 S B 9 1 O M 3 8 2 2SB910M/2SB1238 v = r > 's 7 ,j? ^p'tax'a* Planar PNP Silicon Transistors i ’^ ^ J ii'llffl/M e d iu m Power Amp. • 1 Pc = 1 W 0 /D im e n s io n s U n it: mm) t * it 'o 2 )S W IE , VCeo = - 80V, lc = - 0 . 7 A

2907

Abstract: N2907A 2N2907 N2907 2n2906 2907 pnp transistor 2907A a 2907 transistor 2907 2906
Contextual Info: 'W ' 2 N 2906 * 2 N 2906 A * 2 N 2907 O * 2 N 2907 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und S chalter Applications: A m plifiers and sw itches Features: Besondere Merkmale:

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

221D

Abstract: AM503 AN875 MJF16002 P6302 pd4016
Contextual Info: MOTOROLA SC XSTRS/R 4bE F D • b3b725 4 □0^377S 3 MOTOROLA ■MOTb ^ 3 3 Order this data sheet by MJF16002/D - // ■ SEMICONDUCTOR TECHNICAL DATA M JF16002 Designer's Data Sheet Motorola preferred device NPN Silicon P ow er Transistor S w itc h m o d e S e rie s

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

BY236

Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
Contextual Info: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )

c125t

Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Contextual Info: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: F2111B FE3A ISR73 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FE3A

Abstract: transistor KD 503 Nippon capacitors kdi switch 2218
Contextual Info: REJ09B0163-0100Z 16 H8S/2111B Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2111B Rev.1.00 Revision Date: May. 14, 2004 HD64F2111B Rev. 1.00, 05/04, page ii of xxxiv Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and

maa 502

Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Contextual Info: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik

philips ecg master replacement guide

Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Contextual Info: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW

H8S-2110B

Abstract: p-qfp100-14x14-0.50 KD 472 M "LPC I/O" addressing modes 8086 cfs 455 a Diode KD 514 FE3A H8S/2110 KD 502
Contextual Info: REJ09B0299-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2110B Group Hardware Manual

kbc 1091

Abstract: SPS10R kdi switch F2110BV Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

FE3A

Abstract: H8S/2110 h8s-2110b TF256
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

sm 6136 b

Abstract: F2140B MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SM 6136 60227-4 F2145B
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

F2116BG20V

Abstract: R4F2116 OF798 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

f2116te20v

Abstract: F2116BG20V Diode KD 514 H8S/2116 f2116te 7152 PS2 keyboard PROTOCOL Synchro REJ09B0255-0100 ka bs 89
Contextual Info: REJ09B0255-0100 16 H8S/2116Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2116 Rev.1.00 Revision Date: Mar. 02, 2006 R4F2116 Rev. 1.00 Mar. 02, 2006 Page ii of xl Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and

F2117LP

Abstract: R4F2117 FZTAT256V3A transistor daa 40 470 D10 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

r4f2117

Abstract: F2117 F2117LP 8086 convertion from decimal to binary program GSM modem M10 f2117lp20v BGA PACKAGE OUTLINE PJ6N gsm modem sim 900 IER16
Contextual Info: REJ09B0350-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2117Group Hardware Manual

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle