Matsuo Electric KAB 2402 162
Abstract: pulse load calculation formula E170721 H60A H60S H63A UL248-1 Electronic fuse
Text: No. P-KAH-001 DATE 2007-01 PRODUCTS DATA SHEET MICRO FUSE UL/cUL approved File No. E170721 RoHS COMPLIANT <lead-free> Type KAH Size 1005 Type KAH micro fuse is designed for circuit protection against excessive current in portable electronic equipment, electronic circuit around
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P-KAH-001
E170721
Matsuo Electric KAB 2402 162
pulse load calculation formula
E170721
H60A
H60S
H63A
UL248-1
Electronic fuse
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Matsuo Electric KAB 2402 162
Abstract: Matsuo KAB fuse
Text: No. P-KAH-001 DATE 2006-10 PRODUCTS DATA SHEET MICRO FUSE UL/cUL approved File No. E170721 RoHS COMPLIANT <lead-free> Type KAH Size 1005 Type KAH micro fuse is designed for circuit protection against excessive current in portable electronic equipment, electronic circuit around
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P-KAH-001
E170721
Matsuo Electric KAB 2402 162
Matsuo KAB fuse
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E170721
Abstract: sn 2402
Text: TYPE KAH No. P-KAH-E003 Type KAH micro fuse is designed for circuit protection against excessive current in portable electronic equipment, electronic circuit around battery, etc. because the demand for high capacity batteries is increasing. Further miniaturization and low profile with extended rated range can be used for wider application.
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P-KAH-E003)
E170721
sn 2402
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UL248-1
Abstract: KAH marking Matsuo KAB fuse Matsuo 631 40107 Equivalent
Text: TYPE KAH Type KAH micro fuse is designed for circuit protection against excessive current in portable electronic equipment, electronic circuit around battery, etc. because the demand for high capacity batteries is increasing. Further miniaturization and low profile with extended rated range can be used for wider application.
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C4SS-JM220050-20
Abstract: 19.6608 HC HC49U 4,9152 MHZ 16 MHz - HC49SM - SMD HC-49SM SMD K D S 11.0592 MHZ HC SMD HC-49SM HC49U SMD HC49U/N-R1.8432MHZT HC-49U/N-16.384MHZ
Text: Approved Manufacturers 525-0028-WEB List for Web Parts REVISION HISTORY Description of Change Rev ECO# A - Date B E11137 Internal Revision - no change to part 08/15/00 KAH C E11197 Internal Revision - no change to part 09/14/00 RAK D E12099 Release part for web store.
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525-0028-WEB
E11137
E11197
E12099
E12213
E12399
000MHz
/-50ppmtyp.
/-15ppm.
/-50ppm
C4SS-JM220050-20
19.6608 HC
HC49U 4,9152 MHZ
16 MHz - HC49SM - SMD
HC-49SM SMD
K D S 11.0592 MHZ HC
SMD HC-49SM
HC49U SMD
HC49U/N-R1.8432MHZT
HC-49U/N-16.384MHZ
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Crystals HC49US 20PF
Abstract: 20PF HC-49US HC49Us smd ecs marking guide
Text: Approved Manufacturers List for Web Parts Part Number: 100-0010 REVISION HISTORY Description of Change Rev ECO# A B E11137 Initial Release E11197 Correction to datasheet - wrong one was attached. Date Apvd By 15-Aug-00 KAH Approved Manufacturers: NOTE: In some cases, components under the same part number may originate from various manufacturers,
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E11137
E11197
15-Aug-00
ECS-200-200
Crystals HC49US 20PF
20PF
HC-49US
HC49Us smd
ecs marking guide
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KAG TRANSISTOR
Abstract: DMN5L06V DMN5L06V-7 DMN5L06VA DMN5L06VA-7 g2 marking DIODE
Text: DMN5L06V/VA NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Very Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed
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DMN5L06V/VA
OT-563
J-STD-020C
DMN5L06V
DMN5L06VA
DS30604
KAG TRANSISTOR
DMN5L06V-7
DMN5L06VA-7
g2 marking DIODE
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KAG TRANSISTOR
Abstract: KAH marking DMN5L06V DMN5L06V-7 DMN5L06VA DMN5L06VA-7 marking code va sot VA MARKING
Text: DMN5L06V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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DMN5L06V/VA
OT-563
J-STD-020C
MIL-STD-202,
DS30604
KAG TRANSISTOR
KAH marking
DMN5L06V
DMN5L06V-7
DMN5L06VA
DMN5L06VA-7
marking code va sot
VA MARKING
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Untitled
Abstract: No abstract text available
Text: DMN5L06V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage
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DMN5L06V/VA
OT-563
J-STD-020C
DS30604
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Solar Charge Controller Circuit PWM
Abstract: Solar Charge Controller circuit PWM 12v Solar Charge Controller PWM 12v solar regulator lead acid battery SoC solar charge controller 24V Solar Charge Controller PWM lead acid battery PWM Solar Charge Controller solar voltage regulator 24v PR2020-IP
Text: PHOTOVOLTAIK - PHOTOVOLTAIC - PHOTOVOLTAIQUE - FOTOVOLTAICA Operating instructions Solar Charge Controller PR 00 IP65 EN 718.573 | Z03 | 09.8 Contents 1. Safety instructions and liability
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Untitled
Abstract: No abstract text available
Text: P-JHＢ-E001） Type JHB TYPE JHB High Current Micro Fuse is designed for the purpose of external short circuit protection of the lithium ion battery of medium sizes, such as a power tool and an electric assistant bicycle. Though it was a surface mount type, it was small and realized high current rating, because a fuse element and a terminal adopt the
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-E001ï
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Untitled
Abstract: No abstract text available
Text: P-JHC-E001） Type JHC TYPE JHC High Current Micro Fuse is designed for the purpose of external short circuit protection of the lithium ion battery of medium sizes, such as a power tool and an electric assistant bicycle. Though it was a surface mount type, it was small and realized high current rating, because a fuse element and a terminal adopt the
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P-JHC-E001ï
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Untitled
Abstract: No abstract text available
Text: EIN UNTERNEHMEN VON R oederstein Keramik-Kondensatoren für die professionelle Elektronik Ceramic Capacitors for professional electronics ▼ Keramische Vielschichtkondensatoren in axialer Ausführung, Klasse 2, nach MIL-C-11015 Ceramic multilayer capacitors with axial leads, class 2,
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MIL-C-11015
K13BX562K
K14BR
K15BX104K
7fl21b24
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Untitled
Abstract: No abstract text available
Text: /f-ö 5 -0 7 EIN UNTERNEHMEN VON R oederstein Keramik-Kondensatoren für die professionelle Elektronik Ceramic Capacitors for professional electronics T Keramische Vielschichtkondensatoren in axialer Ausführung, Klasse 2, nach MIL-C-11015 Ceramic multilayer capacitors with axial leads, class 2,
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MIL-C-11015
KAK00HA
CK12BX101
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Untitled
Abstract: No abstract text available
Text: EIN UNTERNEHMEN VON R oe Keramik-Kondensatoren fur die professionelle Elektronik Ceramic Capacitors for professional electronics stein Keram ische Vielschichtkondensatoren in axialer Ausfuhrung, Klasse 2, nach M IL-C -11015 C eram ic m ultilayer capacitors w ith axial leads, class 2,
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Untitled
Abstract: No abstract text available
Text: EIN UNTERNEHMEN VON Keramik-Kondensatoren fur die professionelle Elektronik Ceramic Capacitors for professional electronics Roederstein Keram ische Vielschichtkondensatoren in radialer Ausfuhrung, K lasse 2, nach M IL-C-11015 C eram ic multilayer capacitors with radial leads, cla ss 2,
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IL-C-11015
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smd marking CODE dh
Abstract: ASR423 marking code dh loa marking code
Text: IU I SMD ONE PORT 423.22MHz SAW RESONATOR A ì> S R 4 2 3 . 2 2 r APPLICATION: Automotive Electronics/Remote Control E t f i »5x5x 1.35mm ^ STANDARD SPECIFICATIONS: CHARACTERISTICS UNIT Center Frequency Fo MHz Tolerance from Fo KHz Insertion Loss dB Quality Factor
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22MHz
ASR423
smd marking CODE dh
marking code dh
loa marking code
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marking code fy* transistor
Abstract: transistor M 839 PDTC114EE
Text: Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES • Built-in bias resistors R1 and R2 typ. 10 k ii each • Simplification of circuit design -3 It • Reduces number of components and board space. R1 ./
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SC-75
PDTC114EE.
PDTA114EE
150cC
marking code fy* transistor
transistor M 839
PDTC114EE
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IRFI840G
Abstract: marking code C1L IRFI734G KAH marking
Text: PD-9.1001 International k?r Rectifier IRFI734G HEXFET Power MOSFET • • • • • Isolated Package High Voltage Isolation^ 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance VDSS = 450V R DS on = 1 -2 ^ lD = 3.4A
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IRFI734G
O-220
D-6380
IRFI840G
marking code C1L
IRFI734G
KAH marking
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Untitled
Abstract: No abstract text available
Text: ; PD-9.1007 International Rectifier IRF710S HEXFEf Power M OSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 400 V
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IRF710S
SMD-220
SMD-220
D-6380
465S4S2
G021411
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KAH marking
Abstract: No abstract text available
Text: International IO R Rectifier pdhims IR F R /U 9 3 1 0 P R ELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated V qss — 400V ^DS(on) = 7 .0 Q
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IRFR9310)
IRFU9310)
EiA-481.
KAH marking
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Untitled
Abstract: No abstract text available
Text: PD-9.1012 In tern atio n al io r R e c tifie r IRF830S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description
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IRF830S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT /¿PD4264805, 4265805 64 M-BIT DYNAMIC RAM 8M-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The /iPD4264805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.
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uPD4264805
uPD4265805
/iPD4264805,
32-pin
/iPD4264805-A50
PD4265805-A50
PD4264805-A60
PD4265805-A60
008tS
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KAH marking
Abstract: ci983
Text: M IC R O N I 11 — ^ MT4C16260/1 256Kx 16 WIDE DRAM WIDE DRAM 256K x 16 DRAM * ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process
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4C16260/1
256Kx
500mW
024-cycle
MT4C16261
40-Pin
MT4C16260/1
KAH marking
ci983
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