PDTC114EE |
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NXP Semiconductors
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PDTC114EE - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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PDTC114EE |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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PDTC114EE |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EE,115 |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd |
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PDTC114EE,115 |
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NXP Semiconductors
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PDTC114 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal |
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PDTC114EEF |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = 10 kohm |
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PDTC114EEF |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EEFTR |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114EET/R |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - Complement: PDTA114EE ; hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; Resistor ratio: 1 ; VCEO max: 50 V |
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PDTC114EETR |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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