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Catalog Datasheet	Type	Document Tags	PDF
K80F Abstract: toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol	Original	TK80F08K3 K80F toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K	PDF
K80F08K Abstract: TK80F08K3 Contextual Info: K80F08K3 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSⅣ K80F08K3 スイッチングレギュレーター用 :RDS (ON) = 3.4 mΩ (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) z 取り扱いが簡単なエンハンスメントタイプです。	Original	TK80F08K3 K80F08K TK80F08K3	PDF
Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator Low leakage current: IDSS = 10 A (max) (VDS = 75 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	TK80F08K3	PDF
Contextual Info: K80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol	Original	TK80F08K3	PDF