K7I163684B Search Results

Contextual Info: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM 18Mb DDRII SRAM Specification 165FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

IR 10D 8A

Contextual Info: K7I163684B K7I161884B K7I160884B Advance 512Kx36 & 1Mx18 & 2Mx8 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx8-bit DDRII CIO b4 SRAM Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark Dec. 16, 2002 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

K7I163684B-FC20

Abstract: K7I163684B-FC25 K7I163684B-FC30 K7I161884B-FC25 K7I161884B-FC30 K7I163684B-FC16
Contextual Info: K7I163684B K7I161884B K7I160884B Preliminary 512Kx36 & 1Mx18 & 2Mx8 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx8-bit DDRII CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 2. Add the speed bin -25

Contextual Info: K7I163684B K7I161884B K7I160884B Preliminary 512Kx36 & 1Mx18 & 2Mx8 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx8-bit DDRII CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 2. Add the speed bin -25

K7I163684B-FC25

Abstract: K7I161884B-FC16 K7I161884B-FC20 K7I161884B-FC25 K7I163684B-FC16 K7I163684B-FC20
Contextual Info: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDRII CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 2. Add the speed bin -25 Jan. 27, 2003

Contextual Info: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDRII CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 2. Add the speed bin -25 Jan. 27, 2003

Contextual Info: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit DDRII CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Dec. 16, 2002 Advance 0.1 2. Add the speed bin -25 Jan. 27, 2003

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Xilinx spartan xc3s400_ft256

Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
Contextual Info: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

K5W1G

Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION

K9F2G08U0C

Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM