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Toshiba America Electronic Components TK7A65D(STA4,Q,M) MOSFET N-CH 650V 7A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK7A65D(STA4,Q,M)	Tube	38		1	1 $2.68 10 $2.68 100 $1.2036 1000 $0.93645 10000 $0.89375	Buy Now
Avnet Americas ()	TK7A65D(STA4,Q,M)	Bulk		24 Weeks, 4 Days	1	1 $2.22 10 $1.84 100 $1.47 1000 $1.05 10000 $1.05	Buy Now
	TK7A65D(STA4,Q,M)	Tube		32 Weeks	50	1 - 10 - 100 $0.83655 1000 $0.79365 10000 $0.79365	Buy Now
Mouser Electronics	TK7A65D(STA4,Q,M)		50			1 $2.64 10 $2.39 100 $1.17 1000 $0.893 10000 $0.893	Buy Now
Newark	TK7A65D(STA4,Q,M)	Bulk	2,247		1	1 $0.785 10 $0.785 100 $0.785 1000 $0.72 10000 $0.72	Buy Now
EBV Elektronik	TK7A65D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K7A65D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	TK7A65D	PDF
Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	TK7A65D	PDF
K7A65D Abstract: TK7A65D on47 k7a65 Contextual Info: K7A65D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K7A65D スイッチングレギュレータ用単位: mm : RDS (ON) =0.8 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2	Original	TK7A65D K7A65D TK7A65D on47 k7a65	PDF
K7A65D Abstract: TK7A65D k7a65 Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	TK7A65D K7A65D TK7A65D k7a65	PDF
Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	TK7A65D	PDF
TK7A65D Abstract: K7A65D k7a65 DSASW0038967 Contextual Info: K7A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K7A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.8 Ω(typ.) High forward transfer admittance: \|Yfs\| = 4.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V)	Original	TK7A65D TK7A65D K7A65D k7a65 DSASW0038967	PDF