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Samsung Semiconductor K7A403600M-QC16
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Bristol Electronics	K7A403600M-QC16		5,224			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	K7A403600M-QC16		4,175			1 $12.5 10 $12.5 100 $12.5 1000 $6.5625 10000 $6.5625	Buy Now
	K7A403600M-QC16		9			1 $12.5 10 $9.375 100 $9.375 1000 $9.375 10000 $9.375	Buy Now
Samsung Semiconductor K7A403600M-QE16
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Bristol Electronics	K7A403600M-QE16		431			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	K7A403600M-QE16		343			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K7A403600M -QC16T
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Bristol Electronics	K7A403600M -QC16T		24			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	K7A403600M -QC16T		19			1 $21.915 10 $19.48 100 $18.019 1000 $18.019 10000 $18.019	Buy Now
Samsung Semiconductor K7A403600M-QE20
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Bristol Electronics	K7A403600M-QE20		22			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K7A403600M-QC22
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Quest Components	K7A403600M-QC22		48			1 $25.52 10 $25.52 100 $21.692 1000 $21.692 10000 $21.692	Buy Now

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K7A403600M Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K7A403600M		Samsung Electronics	128Kx36-Bit Synchronous Pipelined Burst SRAM Data Sheet		Original	PDF
K7A403600M		Samsung Electronics	128Kx36-Bit Synchronous Pipelined Burst SRAM Data Sheet		Original	PDF

K7A403600M Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: K7A403600M 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May . 15. 1997 Preliminary 0.1 Change 7.5 bin to 7.2 January . 13 . 1998 Preliminary 0.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85	Original	PDF	K7A403600M 128Kx36-Bit 128Kx36 119BGA 64-Bits
K7A403600M Abstract: advh Text: K7A403600M 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft April . 14. 1998 Preliminary 0.1 Change Undershoot spec from -3.0V pulse width ≤20ns to -2.0V(pulse width ≤ t CYC/2)	Original	PDF	K7A403600M 128Kx36 128Kx36-Bit 100-TQFP-1420A K7A403600M advh
Untitled Abstract: No abstract text available Text: K7A403600M 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft April . 14. 1998 Preliminary 0.1 Change Undershoot spec from -3.0V pulse width≤20ns to -2.0V(pulse width≤tCYC/2)	Original	PDF	K7A403600M 128Kx36 128Kx36-Bit 100-TQFP-1420A
K7A403600M Abstract: No abstract text available Text: K7A403600M 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft May . 15. 1997 Preliminary 0.1 Change 7.5 bin to 7.2 January . 13 . 1998 Preliminary 0.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85	Original	PDF	K7A403600M 128Kx36 128Kx36-Bit 119BGA 100-TQFP-1420A K7A403600M
K7A403600M Abstract: No abstract text available Text: K7A403600M 128Kx36 Synchronous SRAM Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 Initial draft April . 14. 1998 Preliminary 0.1 Change Undershoot spec from -3.0V pulse width≤20ns to -2.0V(pulse width≤tCYC/2)	Original	PDF	K7A403600M 128Kx36 128Kx36-Bit width20ns) 100-TQFP-1420A K7A403600M
K7A803609B-PC25 Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15	Original	PDF	K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Untitled Abstract: No abstract text available Text: ZLAN-150 MVTX280x Memory Interface Application Note Contents April 2005 1.0 Overview 2.0 Introduction 3.0 Memory Interfaces 3.1 SBRAM Interface Signals 3.2 ZBT-SBRAM Interface Signals 3.3 Bootstrap Settings 3.4 Acceptable SBRAM Memory 3.5 Acceptable ZBT-SRAM Memory	Original	PDF	ZLAN-150 MVTX280x
MVTX260X Abstract: MC8031 Text: MSAN-211 MVTX260x/ZL5041x SBRAM Memory Interface Application Note Contents March 2005 For the chipsets with GE ports MVTX2603/4 & ZL50417/8 , two memory banks are required. There is no option to disable the second bank. The FE only chipsets (MVTX2601/2 & ZL50415/6) require one bank	Original	PDF	MSAN-211 MVTX260x/ZL5041x MVTX2603/4 ZL50417/8) MVTX2601/2 ZL50415/6) MVTX260X MC8031
KM62256BLG-7 Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12 Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC	Original	PDF	C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12