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K70A06J Abstract: TK70A06J1 Contextual Info: K70A06J1 東芝電界効果トランジスタシリコンNチャネルMOS形超高速U-MOSⅢ K70A06J1 スイッチングレギュレーター用単位: mm z ゲート入力電荷量が小さい。: Qg = 87 nC (標準) z オン抵抗が低い。 : RDS (ON) = 5.1 mΩ (標準)	Original	TK70A06J1 SC-67 2-10U1B K70A06J TK70A06J1	PDF
Contextual Info: K70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70A06J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)	Original	TK70A06J1	PDF
TK70A06J1 Abstract: K70A06J Contextual Info: K70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70A06J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)	Original	TK70A06J1 TK70A06J1 K70A06J	PDF

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K70A06J

Abstract: TK70A06J1
Contextual Info: K70A06J1 東芝電界効果トランジスタシリコンNチャネルMOS形超高速U-MOSⅢ K70A06J1 スイッチングレギュレーター用単位: mm z ゲート入力電荷量が小さい。: Qg = 87 nC (標準) z オン抵抗が低い。 : RDS (ON) = 5.1 mΩ (標準)

Original

TK70A06J1 SC-67 2-10U1B K70A06J TK70A06J1

PDF

Contextual Info: K70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70A06J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)

Original

TK70A06J1

PDF

TK70A06J1

Abstract: K70A06J
Contextual Info: K70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K70A06J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)

Original

TK70A06J1 TK70A06J1 K70A06J

PDF