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Samsung Electronics Co. Ltd K6X8008T2BUF55 1 M X 8 BIT LOW POWER AND LOW VOLTAGE CMOS STATIC RAM Standard SRAM, 1MX8, 55ns, CMOS, PDSO44 ; ECCN: 3A991.B.2.A Attention: Export Control
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K6X8008T2BUF55 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K6X8008T2B-uf55 Abstract: K6X8008T2BUF55 K6X8008T2B-TF55 K6X8008T2B K6X8008T2B-F K6X8008T2B-Q K6X8008T2B-U Text: K6X8008T2B Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft October 31, 2002 Preliminary 0.1 Revised - Deleted 44-TSOP2-400R package type. December 11, 2002	Original	K6X8008T2B 44-TSOP2-400R K6X8008T2B-uf55 K6X8008T2BUF55 K6X8008T2B-TF55 K6X8008T2B-F K6X8008T2B-Q K6X8008T2B-U	PDF
K6X8016T3B-UF55 Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70 Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm	Original	AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70	PDF
Untitled Abstract: No abstract text available Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their	Original	AN1012	PDF
K6X8008T2B-UF55 Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,	Original	AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety	PDF