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    K6F2016U4G Search Results

    K6F2016U4G Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6F2016U4G Samsung Electronics 2Mb (128K x 16 bit) Low Power SRAM Original PDF
    K6F2016U4G-F Samsung Electronics 2Mb (128K x 16 bit) Low Power SRAM Original PDF
    K6F2016U4G-FF55 Samsung Electronics 2Mb (128K x 16 bit) Low Power SRAM Original PDF
    K6F2016U4G-XF55 Samsung Electronics 2Mb (128K x 16 bit) Low Power SRAM Original PDF

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    K6F2016U4G

    Abstract: K6F2016U4G-F
    Text: Preliminary CMOS SRAM K6F2016U4G Family 2Mb 128K x 16 bit Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K6F2016U4G 55/Typ. 35/Typ. K6F2016U4G-F

    K6F4016U6G

    Abstract: K6F2016U4G
    Text: SRAM Mode Comparison - K6F2016U4G - K6F4016U6G January. 2007 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The Leader in Memory Technology


    Original     		PDF K6F2016U4G K6F4016U6G K6Fxx16U4G: K6Fxx16U6G: K6F2016U4G: K6F4016U6G: K6F4016U6G K6F2016U4G. K6F2016U4G

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN