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Samsung Semiconductor K6F1016U4C-EF70TNO
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Bristol Electronics	K6F1016U4C-EF70TNO		6,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEC K6F1016U4C-EF70
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Bristol Electronics	K6F1016U4C-EF70		1,900		2	1 - 10 $2.912 100 $2.0908 1000 $1.8368 10000 $1.8368	Buy Now
Quest Components	K6F1016U4C-EF70		1,520			1 $6 10 $6 100 $6 1000 $2.4 10000 $2.1	Buy Now
Samsung Semiconductor K6F1016U4C-EF70
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Bristol Electronics	K6F1016U4C-EF70		1,749			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	K6F1016U4C-EF70		725			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	K6F1016U4C-EF70		1,399			1 $5.76 10 $5.76 100 $5.76 1000 $2.88 10000 $2.88	Buy Now
Samsung Semiconductor K6F1016U4CEF70 64K X 16 BIT SUPER LOW POWER AND LOW VOLTAGE FULL CMOS STATIC RAM Standard SRAM, 64KX16, 70ns, CMOS, PBGA48
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ComSIT USA	K6F1016U4CEF70		5,725			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K6F1016U4C Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K6F1016U4C		Samsung Electronics	IC,SRAM,64KX16,CMOS,BGA,48PIN,PLASTIC		Original	PDF
K6F1016U4C-EF55		Samsung Electronics			Original	PDF
K6F1016U4C-EF70		Samsung Electronics			Original	PDF

K6F1016U4C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K6F1016U4C Abstract: No abstract text available Text: K6F1016U4C Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft May 17, 2001 1.0 Finalize - Changed 48-TBGA vertical dimension	Original	PDF	K6F1016U4C 48-TBGA 58/Typ. 32/Typ.
K6F1016U4C Abstract: No abstract text available Text: K6F1016U4C Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft May 17, 2001 1.0 Finalize - Changed 48-TBGA vertical dimension	Original	PDF	K6F1016U4C 48-TBGA K6F1016U4C-AF55/AF70) 58/Typ. 32/Typ.
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	PDF	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
TSOP44 Package Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70 Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments	Original	PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	PDF	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
HM628100 Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA	Original	PDF	Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
TC55VEM416AXBN Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	PDF	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN