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Catalog Datasheet	Type	Document Tags	PDF
K60A08J Contextual Info: K60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60A08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)	Original	TK60A08J1 K60A08J	PDF
K60A08J Abstract: TK60A08J1 Contextual Info: K60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60A08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)	Original	TK60A08J1 K60A08J TK60A08J1	PDF
K60A08J Abstract: TK60A08J1 Contextual Info: K60A08J1 東芝電界効果トランジスタシリコンNチャネルMOS形超高速U-MOSⅢ K60A08J1 スイッチングレギュレーター用単位: mm z ゲート入力電荷量が小さい。: Qg=86nC (標準) z オン抵抗が低い。 : RDS (ON) = 6.2mΩ (標準)	Original	TK60A08J1 SC-67 2-10U1B K60A08J TK60A08J1	PDF
Contextual Info: K60A08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K60A08J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 86nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.)	Original	TK60A08J1 60ments,	PDF