TK55A10J1
Abstract: No abstract text available
Text: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)
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TK55A10J1
TK55A10J1
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TK55A10J1
Abstract: No abstract text available
Text: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)
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TK55A10J1
TK55A10J1
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Untitled
Abstract: No abstract text available
Text: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 110nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)
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TK55A10J1
110nC
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TK55A10J1
Abstract: No abstract text available
Text: K55A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K55A10J1 Switching Regulator Applications Unit: mm • High-Speed switching • Low gate charge: Qg = 110 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)
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TK55A10J1
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TK55A10J1
Abstract: K55A10J TK55A10J
Text: K55A10J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K55A10J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。 : Qg=110nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 110 S (標準)
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TK55A10J1
110nC
SC-67
2-10U1B
TK55A10J1
K55A10J
TK55A10J
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