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    Samsung Semiconductor K4W1G1646E-HC12

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    Samsung Semiconductor K4W1G164G-BC12

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    K4W1G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4W1G1646E

    Abstract: K4W1G1646E-HC11
    Text: Rev. 1.3, Mar. 2011 K4W1G1646E 1Gb E-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4W1G1646E K4W1G1646E K4W1G1646E-HC11 PDF

    K4W1G1646D-EC15

    Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
    Text: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		K4W1G1646D K4W1G1646D-EC15 K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D PDF

    K4W1G1646G-BC11

    Abstract: K4W1G1646G-BC12 470 AP 02
    Text: Rev. 1.0, Nov. 2010 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4W1G1646G K4W1G1646G-BC11 K4W1G1646G-BC12 470 AP 02 PDF

    K4W1G1646G-BC11

    Abstract: gDDR3-1333 K4W1G1646G-BC1A
    Text: Rev. 1.1, Jan. 2011 K4W1G1646G 1Gb G-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4W1G1646G K4W1G1646G-BC11 gDDR3-1333 K4W1G1646G-BC1A PDF

    K4W1G1646E-HC12

    Abstract: K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000
    Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT


    Original     		K4W1G1646E K4W1G1646E-HC12 K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000 PDF

    K4W1G1646E

    Abstract: samsung K4W1G1646E-HC11
    Text: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		K4W1G1646E K4W1G1646E samsung K4W1G1646E-HC11 PDF

    K4W1G1646D-EC15

    Abstract: K4W1G1646D
    Text: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.


    Original     		K4W1G1646D K4W1G1646D-EC15 K4W1G1646D PDF

    SLG8SP587V

    Abstract: SLG8SP587 LA5511P 216-0729042 BCM57780 ALC669X LA-5511P TPS51125 hm55 9LRS3199
    Text: A B C D E 1 1 Compal Confidential 2 2 NCQD0 M/B Schematics Document Intel Arrandale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-08-10 3 3 REV:1.0 4 4 2009/08/10 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2010/08/10


    Original     		A5511 MAX17028 SLG8SP587V SLG8SP587 LA5511P 216-0729042 BCM57780 ALC669X LA-5511P TPS51125 hm55 9LRS3199 PDF

    samsung r580

    Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917 PDF

    ALC271X

    Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
    Text: A B C D E Compal Confidential 1 Model Name : P5WE0 File Name : LA-6901P BOM P/N:43 1 Compal Confidential 2 2 P5WE0 M/B Schematics Document Intel Sandy Bridge Processor with DDRIII + Cougar Point PCH Nvidia N12P GS/GV 2010-08-11 3 3 REV:0.1 4 4 Issued Date


    Original     		LA-6901P ALC271X alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 RTM890N-631-VB-GRT PDF

    WPCE773LA0DG

    Abstract: DIODE C502 TPS51125 winbond wpce773la0dg RT8202 Realtek ALC269Q High Definition Audio P8022 NDS0610-NL-GP SC1U6D3V2KX-GP M92A
    Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA REVISION : 08274-SA JM41 Discrete Block Diagram 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 D Thermal Sensor Intel CPU CLK GEN. SMSC Penryn SFF ICS9LPRS365B 4,5,6


    Original     		4CQ01 08274-SA TPS51125 ICS9LPRS365B EMC2103 RT8202 667/800/1066MHz 64Mbx16x4 512MB) WPCE773LA0DG DIODE C502 TPS51125 winbond wpce773la0dg RT8202 Realtek ALC269Q High Definition Audio P8022 NDS0610-NL-GP SC1U6D3V2KX-GP M92A PDF

    k4w2g1646

    Abstract: GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3
    Text: Date : February. 9, 2009 Application Application Note Note Graphic Memory Dout Valid Window at DLL-Off Mode Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup Hwasung-City, Kyungki-Do, Korea R.O.K


    Original     		800Mbps K4N51163QE-ZC 100MHz 166MHz K4J55323QI-BC 200MHz 252MHz K4N56163QG-GC k4w2g1646 GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3 PDF

    k4g10325fe-hc04

    Abstract: samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung
    Text: Jul. 2010 Graphic Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		K4W2G1646C HC1A/11 HC7A/08 A/12/14 16Mx32 128Mx16 K4J52324KI 96ball 512Mb 136ball k4g10325fe-hc04 samsung gddr5 GDDR5 K4G10325FE K4W2G1646C K4G20325FC k4w2g1646 POD-15 K4W1G1646E gddr5 samsung PDF

    kb3926qf d2

    Abstract: ene kb3926qf d2 kb3926 d2 ene kb3926qf RT8206B 62882c RT8111 RTL8111DL RTL8111d RT8111DL
    Text: 1 2 3 4 5 6 7 8 Jones/Cujo 2.0 UP6/7 BLOCK DIAGRAM PCB STACK UP 6L Dis. 01 27MHz LAYER 1 : TOP A HDMI CON CPU LAYER 2 : SGND DDRIII DDRIII-SODIMM1 LAYER 3 : IN1 LAYER 4 : IN2 LAYER 5 : SVCC DDRIII DDRIII-SODIMM2 LAYER 6 : BOT 800/1066 MT/s PAGE 13 CRT N10M-GE


    Original     		27MHz 1333MT/s N10M-GE N10P-GE RJ-45 768KHz 25MHz 150MB 150MB kb3926qf d2 ene kb3926qf d2 kb3926 d2 ene kb3926qf RT8206B 62882c RT8111 RTL8111DL RTL8111d RT8111DL PDF

    DIODE C502

    Abstract: WPCE773LA0DG transistor K0392 RT9724GB-GP gfx E3 diode M92-LP winbond wpce773la0dg NC7SB3157P6X-1GP P8022 TPS51125
    Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SB REVISION : 08274-1 JM41/JM51 Discrete Block Diagram 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 D UMA LVDS UMA CRT Thermal Sensor Intel CPU CLK GEN. SMSC DIS LVDS


    Original     		JM41/JM51 4CQ01 TPS51125 EMC2103 ICS9LPRS365B RT8202 667/800/1066MHz 64Mbx16x4 512MB) DIODE C502 WPCE773LA0DG transistor K0392 RT9724GB-GP gfx E3 diode M92-LP winbond wpce773la0dg NC7SB3157P6X-1GP P8022 TPS51125 PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    LA5511P

    Abstract: 216-0774007 BD82PM55 LA-5511P BCM57780 ATI 216-0728014 MX25L3205DM2I ATI M96 tps51125 2160728014
    Text: A B C D E 1 1 Compal Confidential 2 2 NCQD0 M/B Schematics Document Intel Arrandale/Clarksfield Processor with DDRIII + Ibex Peak-M 2009-09-30 3 3 REV:2.0 4 4 2009/09/30 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2010/09/30


    Original     		MAX17028 LA-5511P LA5511P 216-0774007 BD82PM55 BCM57780 ATI 216-0728014 MX25L3205DM2I ATI M96 tps51125 2160728014 PDF

    APW7141

    Abstract: tps51620 bremen-ul samsung r730 rt8205 mec1308 Alcor card reader controller AU6336 smd diode S6 67A BA41-XXXXXA cantiga gl40 samsung r530
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		100nF APW7141 tps51620 bremen-ul samsung r730 rt8205 mec1308 Alcor card reader controller AU6336 smd diode S6 67A BA41-XXXXXA cantiga gl40 samsung r530 PDF

    amd 216-0674026

    Abstract: 216-0674026 amd 218s7ebla12fg KB926 SB710 KAV10 ALC269X APL5607 FBMA-L11-201209-221LMA30T ISL6251
    Text: A B C D E 1 1 Compal Confidential 2 2 NAL00 Schematics Document AMD L310/L110 Processor with RS780MN/SB710/M92-S2/S3 LP 2009-04-24 3 3 REV:0.2 4 4 2008/10/06 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2009/10/06 Deciphered Date


    Original     		NAL00 L310/L110 RS780MN/SB710/M92-S2/S3 A5401 50V8J 50V8J amd 216-0674026 216-0674026 amd 218s7ebla12fg KB926 SB710 KAV10 ALC269X APL5607 FBMA-L11-201209-221LMA30T ISL6251 PDF

    oz8681l

    Abstract: OZ8681 RT8207AGQW 8681l P0603BDG 92hd80 RTL8111D MEK100-05-DPS RS880M RS880
    Text: 1 2 3 4 PCB STACK UP A LAYER LAYER LAYER LAYER LAYER LAYER 1 2 3 4 5 6 5 6 7 8 01 LX89 SYSTEM DIAGRAM : TOP :GND : IN1 : IN2 : VCC : BOT DDR3-SODIMM1 DDR3 channel A DDR3-SODIMM2 CPU THERMAL SENSOR AMD Champlain PAGE 6,7 35mm X 35mm S1G4 Processor DDR3 channel B


    Original     		318MHz 5W/35W ICS9LPRS476AKLFT-- SLG8SP628VTR-- RTM880N-796 RS880 528pin RTL8111D VDD10 oz8681l OZ8681 RT8207AGQW 8681l P0603BDG 92hd80 RTL8111D MEK100-05-DPS RS880M PDF

    MEC1308-NU

    Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4


    Original     		VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308 PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 PDF

    IT8500E-L

    Abstract: it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00
    Text: 5 4 SYSTEM PAGE REF. Content PAGE D C B A 1 2 3 4 5 6 7 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 36 37 38 40 41 42 43 44 45 46 47 48 50 51 52 53 56 57 60 61 Block Diagram System Setting CPU 1 _DMI,PEG,FDI,CLK,MISC CPU(2)_DDR3 CPU(3)_CFG,RSVD,GND


    Original     		ICS9LPR362 IT8512 CODEC-ALC663 FM2010 R5C833 110ms 100us M60JV IT8500E-L it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00 PDF

    K4W1G1646E-HC12

    Abstract: K4W1G1646E-HC11 samsung K4W1G1646E-HC11 64mx16 K4W1G1646E compatibility gddr3 K4W1G1646E-HC15 samsung K4W1G1646E-HC12 900MHz
    Text: Application Application Note Note 64Mx16 gDDR3 Compatibility - Coverage for 900MHz, 800MHz and 667MHz - Jan, 2009 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application


    Original     		64Mx16 900MHz, 800MHz 667MHz 900/800/667MHz K4W1G1646E-HC11 900MHz K4W1G1646E-HC12 800MHz K4W1G1646E-HC12 K4W1G1646E-HC11 samsung K4W1G1646E-HC11 K4W1G1646E compatibility gddr3 K4W1G1646E-HC15 samsung K4W1G1646E-HC12 900MHz PDF