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    K4J55323 Price and Stock

    Samsung Semiconductor K4J55323QI-BC12

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    Bristol Electronics K4J55323QI-BC12 2,240
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    Samsung Semiconductor K4J55323QF-GL20

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    Samsung Semiconductor K4J55323QI-BJ1A

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    Bristol Electronics K4J55323QI-BJ1A 1,679
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    Samsung Semiconductor K4J55323QG-BC12

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    Bristol Electronics K4J55323QG-BC12 608
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    Samsung Semiconductor K4J55323QF-VC20

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    K4J55323 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4J55323QF-GC Samsung Electronics 256Mbit GDDR3 SDRAM Original PDF
    K4J55323QF-GC12 Samsung Electronics 2M x 32 Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe Original PDF
    K4J55323QF-GC14 Samsung Electronics V(in/out): -0.5 to+0.5V 700MHz 1400Mbps/pin 2M x 32-bit x 4 banks graphic double data rate 3 synchronous DRAM with uni-directional data strobe and DLL Original PDF
    K4J55323QF-GC15 Samsung Electronics 256Mbit GDDR3 SDRAM Original PDF
    K4J55323QF-GC16 Samsung Electronics V(in/out): -0.5 to+0.5V 600MHz 1200Mbps/pin 2M x 32-bit x 4 banks graphic double data rate 3 synchronous DRAM with uni-directional data strobe and DLL Original PDF
    K4J55323QF-GC16 Samsung Electronics 2M x 32 Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe Original PDF
    K4J55323QF-GC20 Samsung Electronics V(in/out): -0.5 to+0.5V 500MHz 1000Mbps/pin 2M x 32-bit x 4 banks graphic double data rate 3 synchronous DRAM with uni-directional data strobe and DLL Original PDF
    K4J55323QF-VC14 Samsung Electronics IC DRAM CHIP SDRAM 256MBIT 2V 144FBGA Original PDF
    K4J55323QF-VC16 Samsung Electronics IC DRAM CHIP SDRAM 256MBIT 2V 144FBGA Original PDF
    K4J55323QF-VC20 Samsung Electronics IC DRAM CHIP SDRAM 256MBIT 2V 144FBGA Original PDF
    K4J55323QG Samsung Electronics 256Mbit GDDR3 SDRAM Original PDF
    K4J55323QG-BC12 Samsung Electronics 256Mbit GDDR3 SDRAM Original PDF
    K4J55323QG-BC14 Samsung Electronics IC DRAM CHIP GDDR3 SDRAM 256MBIT 1.8V 136FBGA Original PDF
    K4J55323QG-BC16 Samsung Electronics IC DRAM CHIP GDDR3 SDRAM 256MBIT 1.8V 136FBGA Original PDF
    K4J55323QG-BC20 Samsung Electronics IC DRAM CHIP GDDR3 SDRAM 256MBIT 1.8V 136FBGA Original PDF

    K4J55323 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QG 256Mbit PDF

    DDR2 x32

    Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4J55323QF-GC 256Mbit 32Bit K4J55323QF-G DDR2 x32 GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N PDF

    DDR2 x32

    Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-GC14/16/20 DDR2 x32 GC14 K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User PDF

    136ball

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG-BC 256Mbit GDDR3 SDRAM Revision 1.0 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QG-BC 256Mbit 136ball PDF

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-Max PDF

    K4J55323QI

    Abstract: K4J55323QI-BC14 K4J55323QI-BC12 K4J55323
    Text: 256M GDDR3 SDRAM K4J55323QI 256Mbit GDDR3 SDRAM Revision 1.3 May 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QI 256Mbit K4J55323QI K4J55323QI-BC14 K4J55323QI-BC12 K4J55323 PDF

    K4D55323

    Abstract: K4D55323QF X321
    Text: Date : March 18 , 2005 Application Application Note Note Clock frequency change sequence Product : K4J55323QF/K4D55323QF Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup


    Original     		K4J55323QF/K4D55323QF K4J55323QF K4D55323QF. K4D55323 K4D55323QF X321 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QI 256Mbit GDDR3 SDRAM Revision 1.0 January 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QI 256Mbit PDF

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QI 256Mbit GDDR3 SDRAM Revision 1.1 February 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QI 256Mbit PDF

    K4J55323QG-BC20

    Abstract: K4J55323QG-BC14 K4J55323QG K4J55323QG-BC12 K4J55323QG-BC16
    Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.1 November 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QG 256Mbit K4J55323QG-BC20 K4J55323QG-BC14 K4J55323QG K4J55323QG-BC12 K4J55323QG-BC16 PDF

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.3 June 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QG 256Mbit PDF

    K4J55323QF-GC20

    Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4J55323QF-GC 256Mbit K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3 PDF

    K4J55323QF-GC20

    Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.3 June 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		K4J55323QF-GC 256Mbit 32Bit -GC12 20very K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    RAS 0510 SUN HOLD

    Abstract: sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D GENEVA CPU : Chip Set : Remarks :


    Original     		BA41-XXXXX SheP18050 TP18051 TP18052 TP18164 TP18170 TP18172 TP18178 TP18183 TP18187 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 NH82801HBM bd3 c531 diode schematic diagram hdmi to rca le88clpm U519-1 20B3 diode schematic diagram crt tv samsung PDF

    ST T4 D560

    Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom


    Original     		YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4 PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    k4w2g1646

    Abstract: GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3
    Text: Date : February. 9, 2009 Application Application Note Note Graphic Memory Dout Valid Window at DLL-Off Mode Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup Hwasung-City, Kyungki-Do, Korea R.O.K


    Original     		800Mbps K4N51163QE-ZC 100MHz 166MHz K4J55323QI-BC 200MHz 252MHz K4N56163QG-GC k4w2g1646 GDDR K4J52324Q 54NS k4j10324qd-hc k4n51163qe-zc K4J55323 K4W1G1646D-EC K4W1G1646E A/SAMSUNG GDDR3 PDF

    GDDR

    Abstract: K4J52324Q K4D55323QF K4D263238G-GC K4D553235F-GC K4J55323QF-GC K4N56163QF-GC K4D55323QF-GC K4D263238G K4D263238
    Text: Date : June 16 , 2005 Revision 0.3 Application Application Note Note GDDR Dout Valid Window at DLL-Off Mode Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San #16 Banwol-Ri, Taean-Eup Hwasung-City, Kyungki-Do, Korea(R.O.K)


    Original     		800Mbps K4D26323QG-GC 100MHz 166MHz K4D263238G-GC 128Mb 166Mhz) GDDR K4J52324Q K4D55323QF K4D263238G-GC K4D553235F-GC K4J55323QF-GC K4N56163QF-GC K4D55323QF-GC K4D263238G K4D263238 PDF

    SAMSUNG RV410

    Abstract: SMB29 isl6260 PC87541 R141 237 000 SCK 054 VARISTOR quanta foxconn R648 PCI7412
    Text: 1 2 3 4 5 6 7 8 MA6 BLOCK DIAGRAM CPU Yonah/Merom USB USB4 A 14.318MHz MAX1993 VGACORE (1.2V/NB_CORE/1.25V) PG 3 1394 X1 ICSXXXX 56pins 479 Pins (uPGA) MODEM PCI-E X1 CRT/S-Video CPU CORE ISL6260+6208 POWER 1.2V/44A PG 45 OSC14M HTREFCLK NBSRCCLK, NBSRCCLK#


    Original     		318MHz 10/100/1G MAX1993 56pins OSC14M ISL6260 V/44A MAX8743 1439/Correct SAMSUNG RV410 SMB29 PC87541 R141 237 000 SCK 054 VARISTOR quanta foxconn R648 PCI7412 PDF

    FCBGA-1299

    Abstract: transistor c1394 Transistor C1390 U112D nvidia chip transistor C1740 CXD9872AK TRANSISTOR C1741 c1740 transistor C1399 transistor
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Rev. Title of Schematics Page Schematics Page Index Block Diagram Merom(HOST BUS) 1/3


    Original     		75ohm 120ohm C1400, C1399, C1401, C1402, C1403, C1404 PC214 MS90-1-01 FCBGA-1299 transistor c1394 Transistor C1390 U112D nvidia chip transistor C1740 CXD9872AK TRANSISTOR C1741 c1740 transistor C1399 transistor PDF

    gddr3

    Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
    Text: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3  is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important


    Original     		512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA PDF

    PJ 906 lv

    Abstract: LM358L VN896 nec lcd inverter schematic m660sr STR - Z 2757 M960 M19T NB8M M660SR/M665SR
    Text: Preface Notebook Computer M660SR/M665SR Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are


    Original     		M660SR/M665SR PJ 906 lv LM358L VN896 nec lcd inverter schematic m660sr STR - Z 2757 M960 M19T NB8M PDF

    SAMSUNG RV410

    Abstract: isl6260 TPC8018H SMB29 C945 p331 quanta at1 PC87541 max1993etg foxconn quanta
    Text: 1 2 3 4 5 6 7 8 MA7 BLOCK DIAGRAM Yonah / CALISTOGA / ICH-7m CPU THERMAL SENSOR CPU Yonah/Merom A 14.318MHz MAX1993 VGACORE 1.2V/NB_CORE/1.25V PG 3 ICSXXXX 56pins 479 Pins (uPGA) CPU CORE ISL6260+6208 POWER 1.2V/44A PG 43 OSC14M HTREFCLK NBSRCCLK, NBSRCCLK#


    Original     		318MHz MAX1993 56pins OSC14M ISL6260 V/44A MAX8743 SAMSUNG RV410 TPC8018H SMB29 C945 p331 quanta at1 PC87541 max1993etg foxconn quanta PDF