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    Samsung Semiconductor K4S640832D-TC80

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    Bristol Electronics K4S640832D-TC80 56
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    Quest Components K4S640832D-TC80 44
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    K4S640832D-TC80 44
    • 1 $6.195
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    Samsung Semiconductor K4S640832D-TC1H

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    Quest Components K4S640832D-TC1H 4
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    K4S640832D Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S640832D Samsung Electronics 64Mbit SDRAM 2M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S640832D-TC/L10 Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 66 MHz (CL=2&3), interface LVTTL. Original PDF
    K4S640832D-TC/L1H Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S640832D-TC/L1L Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S640832D-TC/L75 Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S640832D-TC/L80 Samsung Electronics 12M x 8-Bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. Original PDF

    K4S640832D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4S640832D

    Abstract: No abstract text available
    Text: K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 K4S640832D CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S640832D 64Mbit K4S640832D A10/AP PDF

    K4S640832D-TC75

    Abstract: 16MX4 M390S0823DT1-C75 M390S1620DT1-C75
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM Registered SDRAM PC133 DIMM 168pin SPD Specification REV. 0.1 Oct. 1999 REV. 0.1 Oct. '99 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S0823DT1-C75 •Organization : 8MX72 •Composition : 8MX8 *9 •Used component part # : K4S640832D-TC75


    Original     		PC133 168pin) M390S0823DT1-C75 8MX72 K4S640832D-TC75 4K/64ms 128bytes 256bytes K4S640832D-TC75 16MX4 M390S0823DT1-C75 M390S1620DT1-C75 PDF

    M366S1623DT0

    Abstract: M366S1623DT0-C75 K4S640832D-TC75
    Text: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.


    Original     		M366S1623DT0 PC133 PC100 M366S1623DT0 16Mx64 M366S1623DT0-C75 K4S640832D-TC75 PDF

    M374S1623DT0

    Abstract: M374S1623DT0-C7A
    Text: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		M374S1623DT0 PC133 M374S1623DT0 16Mx72 400mil M374S1623DT0-C7A PDF

    M374S1623ET0

    Abstract: M374S1623ET0-C1L
    Text: M374S1623ET0 PC100 Unbuffered DIMM M374S1623ET0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623ET0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S1623ET0 PC100 M374S1623ET0 16Mx72 400mil 168-pin M374S1623ET0-C1L PDF

    M366S0823DTS

    Abstract: No abstract text available
    Text: M366S0823DTS PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. Revision 0.1 (May, 2000) • Changed tOH parameter from 2.7ns to 3.0ns Revision 0.2 (July, 2000) • Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics.


    Original     		M366S0823DTS PC133 PC100 M366S0823DTS 8Mx64 PDF

    Untitled

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 4Layer SPD Specification(64Mb D-die base) Rev. 0.1 Jan. 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü


    Original     		PC100 168pin) M366S0424DTS-C80/C1H/C1L 4Mx64 4Mx16 K4S641632D-TC80/ 000mil 4K/64ms PDF

    M366S0823ETS

    Abstract: M366S0823ETS-C1L
    Text: M366S0823ETS PC100 Unbuffered DIMM M366S0823ETS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M366S0823ETS PC100 M366S0823ETS 8Mx64 400mil 168-pin M366S0823ETS-C1L PDF

    M366S1623DT0

    Abstract: M366S1623DT0-C1H M366S1623DT0-C1L M366S1623DT0-C80
    Text: M366S1623DT0 PC100 Unbuffered DIMM M366S1623DT0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623DT0 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M366S1623DT0 PC100 M366S1623DT0 16Mx64 400mil 168-pin M366S1623DT0-C1H M366S1623DT0-C1L M366S1623DT0-C80 PDF

    M366S1623DT0

    Abstract: M366S1623DT0-C7A K4S640832D-TC75
    Text: M366S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M366S1623DT0 PC133 Unbuffered DIMM M366S1623DT0 SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		M366S1623DT0 PC133 M366S1623DT0 16Mx64 400mil M366S1623DT0-C7A K4S640832D-TC75 PDF

    M374S1623DT0

    Abstract: M374S1623DT0-C1H M374S1623DT0-C1L
    Text: M374S1623DT0 PC100 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S1623DT0 is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S1623DT0 PC100 M374S1623DT0 16Mx72 400mil 168-pin M374S1623DT0-C1H M374S1623DT0-C1L PDF

    M366S0924CTS-C7A

    Abstract: M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75
    Text: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT PC133 Single Sided Unbuffered SDRAM DIMM 168pin SPD Specification REV. 0 March. 2000 REV. 0 March. 2000 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT M366S0424DTS-C7A(Intel SPD 1.2B ver. base) • Organization : 4Mx64


    Original     		PC133 168pin) M366S0424DTS-C7A 4Mx64 4Mx16 K4S641632D-TC75 000mil 4K/64ms M366S0924CTS-C7A M366S1723CTS-C7A K4S640832D-TC75 M366S0823DTS-C7A M374S0823DTS-C7A K4S281632B-TC75 PDF

    M374S0823DTS

    Abstract: M374S0823DTS-C1H M374S0823DTS-C1L M374S0823DTS-C80
    Text: M374S0823DTS PC100 Unbuffered DIMM M374S0823DTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S0823DTS is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M374S0823DTS PC100 M374S0823DTS 8Mx72 400mil 168-pin M374S0823DTS-C1H M374S0823DTS-C1L M374S0823DTS-C80 PDF

    Untitled

    Abstract: No abstract text available
    Text: M466S0823DT3 PC66 SODIMM M466S0823DT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0823DT3 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M466S0823DT3 M466S0823DT3 8Mx64 400mil 144-pin K4S640832D PDF

    Untitled

    Abstract: No abstract text available
    Text: M466S0823DT3 PC66 SODIMM M466S0823DT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M466S0823DT3 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		M466S0823DT3 M466S0823DT3 8Mx64 400mil 144-pin K4S640832D PDF

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S0823DT1 PC133 Registered DIMM Revision History Revision 0 June. 1999 • PC133 first published REV.0 June 1999 M390S0823DT1 PC133 Registered DIMM M390S0823DT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD


    Original     		M390S0823DT1 PC133 M390S0823DT1 8Mx72 400mil PC133 registered reference design PDF

    Untitled

    Abstract: No abstract text available
    Text: M374S1623DT0 PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. REV. 0 June 1999 M374S1623DT0 PC133 Unbuffered DIMM M374S1623DT0 SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		M374S1623DT0 PC133 M374S1623DT0 16Mx72 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: M374S0823DTS PC133 Unbuffered DIMM Revision History Revision 0.0 June, 1999 • PC133 first published. REV. 0 June 1999 M374S0823DTS PC133 Unbuffered DIMM M374S0823DTS SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		M374S0823DTS PC133 M374S0823DTS 8Mx72 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: Rock2 DATA SHEET VERSION 1.1 2006-03-07 Rockchip Electronics 08/04/06 Rockchip Electronics 1 of 128 Rock2 DATA SHEET V1.1 1 Features — — — — — — — — — — — — — — — — — — — 128/100 pins LQFP package Typical power voltage 3.3V IO , 1.8V(Core)


    Original     		24MHz 16bits 10-bit 24-bit 16-bit Rock260X PDF

    K4S641632D-TL1L

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10


    Original     		144pin) M466S0424DT0-L10, 4Mx64 4Mx16 K4S641632D-TL10, 000mil 4K/64ms 128bytes 256bytes 66MHz K4S641632D-TL1L PDF

    M366S0823DTS-C7A

    Abstract: M366S0823DTS
    Text: M366S0823DTS PC133 Unbuffered DIMM Revision History Revision 0.0 July, 2000 • PC133 first published. REV. 0.0 July, 2000 M366S0823DTS PC133 Unbuffered DIMM M366S0823DTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		M366S0823DTS PC133 M366S0823DTS 8Mx64 400mil M366S0823DTS-C7A PDF

    k4s641632d-tc80

    Abstract: samsung date code sAMSUNG PC100-322-620
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb D-die base) Rev. 0.1 Jan 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0824DT0-C80/C1H/C1L ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü


    Original     		PC100 168pin) M366S0824DT0-C80/C1H/C1L 8Mx64 4Mx16 K4S641632D-TC80/ 375mil 4K/64ms k4s641632d-tc80 samsung date code sAMSUNG PC100-322-620 PDF

    K4S641632d-TC80

    Abstract: samsung date code 64Mb samsung SDRAM
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin SPD Specification(64Mb D-die base) Rev. 0.1 Jan. 2000 Rev 0.1 Jan. 2000 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424DTS-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4


    Original     		PC100 168pin) M366S0424DTS-C80/C1H/C1L 4Mx64 4Mx16 K4S641632D-TC80/ 000mil 4K/64ms K4S641632d-TC80 samsung date code 64Mb samsung SDRAM PDF

    samsung date code

    Abstract: 16MX4 K4S640832D-TC1H
    Text: PC100 Registered DIMM SERIAL PRESENCE DETECT PC100 Registered DIMM 168pin Intel Type Rev1.2 SPD Specification(64Mb D-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 PC100 Registered DIMM SERIAL PRESENCE DETECT M377S0823DT3-C1H/C1L(1.2ver) • Organization : 8MX72


    Original     		PC100 168pin) M377S0823DT3-C1H/C1L 8MX72 K4S640832D-TC1H/C1L 4K/64ms 128bytes 256serial samsung date code 16MX4 K4S640832D-TC1H PDF