Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K4S510632B Search Results

    K4S510632B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S510632B-TC/L1H Samsung Electronics DRAM Module, Stacked 512 Mbit SDRAM Original PDF
    K4S510632B-TC/L1L Samsung Electronics DRAM Module, Stacked 512 Mbit SDRAM Original PDF
    K4S510632B-TC/L75 Samsung Electronics DRAM Module, Stacked 512 Mbit SDRAM Original PDF

    K4S510632B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA12

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM K4S510632B Stacked 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 March 2001 * Samsung Electronics reserves the right to change products or specification without Rev. 0.1 Mar.2001 K4S510632B Preliminary CMOS SDRAM


    Original     		PDF K4S510632B 512Mbit A10/AP RA12

    32MX72

    Abstract: 64MX4
    Text: PC100 Registered DIMM SERIAL PRESENCE DETECT PC100 Registered DIMM 168pin Intel Type Rev1.2 SPD Specification(256Mb B-die base) Rev. 0.0 January 2000 Rev. 0.0 Jan. 2000 PC100 Registered DIMM SERIAL PRESENCE DETECT M377S3253BT3-C1H/C1L (1.2 ver ) •Organization : 32MX72


    Original     		PDF PC100 168pin) 256Mb M377S3253BT3-C1H/C1L 32MX72 32MX8 K4S560832B-TC1H/1L 8K/64ms 32MX72 64MX4