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    K4H561638F Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4H561638F Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-TCC4 Samsung Electronics 256Mb F-die DDR400 SDRAM Specification Original PDF
    K4H561638F-TCCC Samsung Electronics 256Mb F-die DDR400 SDRAM Specification Original PDF
    K4H561638F-TC/LA2 Samsung Electronics 256Mb F-die DDR SDRAM Original PDF
    K4H561638F-TC/LA2 Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-TC/LAA Samsung Electronics 256Mb F-die DDR SDRAM Original PDF
    K4H561638F-TC/LAA Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-TC/LB0 Samsung Electronics 256Mb F-die DDR SDRAM Original PDF
    K4H561638F-TC/LB0 Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-TC/LB3 Samsung Electronics 256Mb F-die DDR SDRAM Original PDF
    K4H561638F-TC/LB3 Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-UC Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-UCC4 Samsung Electronics 256Mb F-die DDR400 SDRAM Specification Original PDF
    K4H561638F-UCCC Samsung Electronics 256Mb F-die DDR400 SDRAM Specification Original PDF
    K4H561638F-UC/LA2 Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-UC/LAA Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-UC/LB0 Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF
    K4H561638F-UC/LB3 Samsung Electronics 256Mb F-die DDR SDRAM Specification Original PDF

    K4H561638F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k4h561638f

    Abstract: DDR266 DDR333 ECC SODIMM
    Text: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.1 August, 2003 Rev. 1.1 August 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June 2003) - First release


    Original     		PDF 128MB, 256MB 200pin 72-bit k4h561638f DDR266 DDR333 ECC SODIMM

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    SDH ADM

    Abstract: MultiService Access Platform Frame structure for Multiplexing of four E2 streams into E3 stream barker code motorola STM-1 Physical interface PHY STS-3c-SPE DS33 k4h561638f trace code micron label
    Text: ABRIDGED DATA SHEET Rev: 101508 DS33M30/DS33M31/DS33M33 Ethernet Over SONET/SDH Mapper _ General Description _Features ♦ Support for EoS in One STS-3c/VC-4, EoS Over Up to Three Concatenated STS-1/VC-3s,


    Original     		PDF DS33M30/DS33M31/DS33M33 52Mbps 512Mb DS33X11/ DS33X41 com/DS33M30. SDH ADM MultiService Access Platform Frame structure for Multiplexing of four E2 streams into E3 stream barker code motorola STM-1 Physical interface PHY STS-3c-SPE DS33 k4h561638f trace code micron label

    ixp435

    Abstract: Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465
    Text: Intel IXP435 Multi-Service Residential Gateway Reference Platform User’s Guide June 2007 Document Number: 316848; Revision: 001US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR


    Original     		PDF IXP435 001US 0x50000000 0x00080000 0x00000000 0x50800000 Si3050-FT KENDIN KSZ8995M PNX1702EH/G rt9214 PC28F128J3D PNX1702 TM3260 SI3201-FS IXDP465

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 265MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module DDR400 Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.0 October. 2004 Rev. 1.0 October. 2004 128MB, 265MB, 512MB Unbuffered DIMM


    Original     		PDF 128MB, 265MB, 512MB DDR400 184pin 256Mb 64/72-bit

    DDR266

    Abstract: DDR333 K4H561638F
    Text: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.2 March, 2004 Rev. 1.2 March 2004 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June, 2003) - First release Revision 1.1 (August, 2003)


    Original     		PDF 128MB, 256MB 200pin 72-bit DDR266 DDR333 K4H561638F

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 256Mb F-die x16 DDR SDRAM 256Mb F-die DDR400 SDRAM Specification (x16) 60 FBGA with Pb-Free (RoHS compliant) Revision 1.0 Rev. 1.0 August. 2003 DDR SDRAM 256Mb F-die (x16) DDR SDRAM 256Mb F-die Revision History Revison 1.0 (August. 2003) 1. First release


    Original     		PDF 256Mb DDR400 200MHz 400Mbps DDR400 DDR333

    K4H561638F

    Abstract: DDR266 DDR333
    Text: DDR SDRAM 128MB, 256MB SODIMM Pb-Free DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC 66 TSOP(II) with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revision 1.2 Oct. 2004 128MB, 256MB SODIMM Pb-Free DDR SDRAM Revision History


    Original     		PDF 128MB, 256MB 200pin 72-bit K4H561638F DDR266 DDR333

    KB910

    Abstract: KB910 B4 edw10 la-2301 IXP150 AOS 3401 RC300ML af7 smd transistor smd transistor MP3 Y8 R833 VL28
    Text: 5 4 3 2 1 D D Compal Confidential C C Fortworth20 EDW10 Schematic Document Intel Protability Processor with ATi RC300ML + IXP150 2004-05-26 B B REV: 1.0 A A Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF Fortworth20 EDW10 RC300ML IXP150 LA-2301 KB910 KB910 B4 edw10 la-2301 IXP150 AOS 3401 RC300ML af7 smd transistor smd transistor MP3 Y8 R833 VL28

    k4h561638f

    Abstract: K4H561638F-TCCC MT46V16M16TG-5B EP2S15 EP2S180 EP2S30 EP2S60 EP2S60F1020C3 EP2S90 MT9VDDT3272AG-40B
    Text: Interfacing DDR SDRAM with Stratix II Devices Application Note 327 February 2006 ver. 3.0 Introduction DDR SDRAM devices are widely used today for a broad range of applications, such as embedded processor systems, image processing, storage, communications and networking. In addition, the universal


    Original     		PDF 200-MHz 150-MHz k4h561638f K4H561638F-TCCC MT46V16M16TG-5B EP2S15 EP2S180 EP2S30 EP2S60 EP2S60F1020C3 EP2S90 MT9VDDT3272AG-40B

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 265MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module DDR400 Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC/ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 128MB, 265MB, 512MB Unbuffered DIMM DDR SDRAM


    Original     		PDF 128MB, 265MB, 512MB DDR400 184pin 256Mb 64/72-bit

    Untitled

    Abstract: No abstract text available
    Text: 128MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module DDR400 Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC Revision 1.0 June. 2003 Rev. 1.0 June. 2003 128MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 (June, 2003)


    Original     		PDF 128MB DDR400 184pin 256Mb 64/72-bit M368L1624FTM-C

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB Unbuffered DIMM Pb-Free DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 66 TSOP II with Pb-Free (RoHS compliant) Revision 1.2 Oct. 2004 Revision 1.2 Oct. 2004 256MB, 512MB Unbuffered DIMM Pb-Free


    Original     		PDF 256MB, 512MB 184pin 256Mb 64/72-bit

    k4h561638f

    Abstract: DDR333 DDR400 128Mb
    Text: DDR SDRAM 128MB, 256MB Unbuffered SODIMM DDR SDRAM SODIMM DDR400 Module 200pin Unbuffered SODIMM based on 256Mb F-die 64bit (Non ECC) Revision 1.2 March. 2004 Rev. 1.2 March. 2003 128MB, 256MB Unbuffered SODIMM DDR SDRAM Revision History Revision 0.0 (June, 2003)


    Original     		PDF 128MB, 256MB DDR400 200pin 64bit k4h561638f DDR333 128Mb

    alpha Resistors

    Abstract: k4h561638f DDR266 ALPHA PACKING INFORMATION MB86297EB01
    Text: FAQ list for Carmine Fujitsu Microelectronics Europe GmbH History Date 08.06.2006 Author AG Version 1.0 Comment First release 1 Warranty and Disclaimer To the maximum extent permitted by applicable law, Fujitsu Microelectronics Europe GmbH restricts its warranties and its liability for all products eg. software include or header files, application


    Original     		PDF K4H561638F MT46V16M16TG alpha Resistors k4h561638f DDR266 ALPHA PACKING INFORMATION MB86297EB01

    Untitled

    Abstract: No abstract text available
    Text: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC Revision 1.0 August. 2003 Rev. 1.0 August, 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 August, 2003


    Original     		PDF 256MB, 512MB 184pin 256Mb 64/72-bit

    TAA 611 T12

    Abstract: 72T6480 BA1-B11 d25n3 BA0-C11 k4h561638f A11-C10 q35t Q35T1 A7D9
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb drw44 BB324) 72T6480 drw45 TAA 611 T12 72T6480 BA1-B11 d25n3 BA0-C11 k4h561638f A11-C10 q35t Q35T1 A7D9

    tr/P45/marking code M31

    Abstract: No abstract text available
    Text: Rev 1; 010809 DS33M30/DS33M31/DS33M33 Ethernet Over SONET/SDH Mapper _ General Description _Features ♦ Support for EoS in One STS-3c/VC-4, EoS Over Up to Three Concatenated STS-1/VC-3s, and EoPoS Over Up to Three Concatenated


    Original     		PDF DS33M30/DS33M31/DS33M33 52Mbps 512Mb DS33M30/M31/M33 DS33M31 DS33M33 tr/P45/marking code M31

    Untitled

    Abstract: No abstract text available
    Text: Preliminary DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM DDR400 Module 200pin Unbuffered SODIMM based on 256Mb F-die 64bit (Non ECC) Revision 0.0 June. 2003 Rev. 0.0 June. 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 0.0 (June, 2003) - First release


    Original     		PDF 128MB, 256MB DDR400 200pin 64bit

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC/ECC 66 TSOP-II INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 128MB, 256MB, 512MB 184pin 256Mb 64/72-bit 32Mx8 K4H560838F

    Untitled

    Abstract: No abstract text available
    Text: 128MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC Revision 1.0 June. 2003 Rev. 1.0 June. 2003 128MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 June, 2003 - First release


    Original     		PDF 128MB 184pin 256Mb 64/72-bit M368L1624FTM-C

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 256Mb F-die x8, x16 Pb-Free DDR SDRAM 256Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 May. 2004 Revision 1.1 May. 2004 DDR SDRAM 256Mb F-die (x8, x16) Pb-Free DDR SDRAM 256Mb F-die Revision History Revision 1.0 (April. 2004)


    Original     		PDF 256Mb

    Untitled

    Abstract: No abstract text available
    Text: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.0 June 2003 Rev. 1.0 June 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June 2003) - First release Rev. 1.0 June 2003


    Original     		PDF 128MB, 256MB 200pin 72-bit