K4E661612D Search Results

K4E661612D Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4E661612D		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet		Original	PDF
K4E661612D		Samsung Electronics	4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet		Original	PDF

K4E661612D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4E641612D-TC Abstract: K4E641612D K4E641612D-T K4E661612D K4E641612 Contextual Info: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden	Original	K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-TC K4E641612D K4E641612D-T K4E641612	PDF
K4E641612D Abstract: K4E641612D-T K4E661612D Contextual Info: Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden	Original	K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D K4E641612D-T	PDF
K4E641612D-T Abstract: K4E661612D K4E641612D Contextual Info: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden	Original	K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-T K4E641612D	PDF
Contextual Info: DRAM MODULE M366F080 8 4DT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4DT1-C DRAM MODULE M366F080(8)4DT1-C	Original	M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits	PDF
K4E641612D Contextual Info: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C	Original	M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits K4E641612D	PDF
K4E641612D-T Abstract: k4e641612dt Contextual Info: DRAM MODULE M366F080 8 4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of eight CMOS 4Mx16bits	Original	M366F080 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin K4E641612D-T k4e641612dt	PDF
K4E641612D-T Contextual Info: DRAM MODULE M366F040 8 4DT1-C M366F040(8)4DT1-C EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F040(8)4DT1-C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung M366F040(8)4DT1-C consists of four CMOS 4Mx16bits	Original	M366F040 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin K4E641612D-T	PDF