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    K4E641612D Price and Stock

    Samsung Electro-Mechanics K4E641612D-TC60

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics K4E641612D-TC60 39 1
    • 1 $9
    • 10 $6.75
    • 100 $5.625
    • 1000 $5.625
    • 10000 $5.625
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    Samsung Semiconductor K4E641612D-TC60

    IC,DRAM,EDO,4MX16,CMOS,TSOP,50PIN,PLASTIC
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    Quest Components K4E641612D-TC60 31
    • 1 $12
    • 10 $9
    • 100 $8.1
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    Samsung Semiconductor K4E641612D-TL60

    EDO DRAM, 4MX16, 60NS, CMOS, PDSO50
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    Quest Components K4E641612D-TL60 19
    • 1 $12.6
    • 10 $6.3
    • 100 $6.3
    • 1000 $6.3
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    Samsung Semiconductor K4E641612D-TL50

    IC,DRAM,EDO,4MX16,CMOS,TSOP,50PIN,PLASTIC
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    Quest Components K4E641612D-TL50 3
    • 1 $11.25
    • 10 $5.625
    • 100 $5.625
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    Samsung Electronics Co. Ltd K4E641612DTL60

    4M X 16 BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 ; ECCN: EAR99
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    ComSIT USA K4E641612DTL60 47
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    K4E641612D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E641612D Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF
    K4E641612D Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF

    K4E641612D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4E641612D-TC

    Abstract: K4E641612D K4E641612D-T K4E661612D K4E641612
    Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-TC K4E641612D K4E641612D-T K4E641612 PDF

    K4E641612D

    Abstract: K4E641612D-T K4E661612D
    Text: Industrial Temperature K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have C A S -before-R A S refresh, R A S -only refresh and Hidden


    Original     		K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D K4E641612D-T PDF

    K4E641612D-T

    Abstract: K4E661612D K4E641612D
    Text: K4E661612D,K4E641612D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden


    Original     		K4E661612D K4E641612D 16bit 4Mx16 400mil K4E641612D-T K4E641612D PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M366F080 8 4DT1-C Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M366F080(8)4DT1-C DRAM MODULE M366F080(8)4DT1-C


    Original     		M366F080 8Mx64 4Mx16 4Mx16, 8Mx64bits 4Mx16bits PDF

    K4E641612D

    Abstract: No abstract text available
    Text: DRAM MODULE M366F040 8 4DT1-C Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M DRAM components are applied to this module. M366F040(8)4DT1-C DRAM MODULE M366F040(8)4DT1-C


    Original     		M366F040 4Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits K4E641612D PDF

    K4E641612D-T

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs


    Original     		M374F0405DT1-C M374F0405DT1-C 4Mx16 4Mx72bits 4Mx16bits 300mil 168-pin K4E641612D-T PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0805DT1-C Unbuffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64Mb DRAM components are applied to this module. M374F0805DT1-C DRAM MODULE M374F0805DT1-C


    Original     		M374F0805DT1-C 8Mx72 4Mx16 M374F0805DT1-C 8Mx72bits PDF

    K4E641612D-TL 50

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804DT1-L 8Byte 8Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0804DT1-L DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode


    Original     		M466F0804DT1-L 8Mx64 4Mx16 M466F0804DT1-L 4Mx16, 8Mx64bits K4E641612D-TL 50 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372F0405DT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th.(4th.) generation of 64M(16M) components are applied to this module. M372F0405DT0-C DRAM MODULE M372F0405DT0-C


    Original     		M372F0405DT0-C 4Mx72 4Mx16 M372F0405DT0-C 4Mx72bits PDF

    K4E641612D-TL 50

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0(Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M466F0404DT2-L DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode


    Original     		M466F0404DT2-L 4Mx64 4Mx16 M466F0404DT2-L 4Mx16, 4Mx64bits K4E641612D-TL 50 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		M466F0404DT2-L M466F0404DT2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372F0405DT0-C M372F0405DT0-C EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372F0405DT0-C consists of four 4Mx16bits & two 4Mx4bits


    Original     		M372F0405DT0-C M372F0405DT0-C 4Mx16 4Mx72bits 4Mx16bits 400mil 168-pin PDF

    K4E641612D-T

    Abstract: k4e641612dt
    Text: DRAM MODULE M366F080 8 4DT1-C M366F080(8)4DT1-C EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M366F080(8)4DT1-C is a 8Mx64bits Dynamic RAM high density memory module. The Samsung M366F080(8)4DT1-C consists of eight CMOS 4Mx16bits


    Original     		M366F080 4Mx16, 8Mx64bits 4Mx16bits 400mil 168-pin K4E641612D-T k4e641612dt PDF

    Untitled

    Abstract: No abstract text available
    Text: M372F0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372F0805DT0-C M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode


    Original     		M372F0805DT0-C 8Mx72 4Mx16 M372F0805DT0-C 8Mx72bits PDF

    K4E641612D-T

    Abstract: No abstract text available
    Text: M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0805DT0-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung M372F0805DT0-C consists of eight


    Original     		M372F0805DT0-C M372F0805DT0-C 4Mx16 8Mx72bits 4Mx16bits 400mil 168-pin K4E641612D-T PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0405DT1-C Unbuffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th. generation of 64Mb DRAM components are applied to this module. M374F0405DT1-C DRAM MODULE M374F0405DT1-C


    Original     		M374F0405DT1-C 4Mx72 4Mx16 M374F0405DT1-C 4Mx72bits PDF

    M466F0804DT1-L

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0804DT1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


    Original     		M466F0804DT1-L M466F0804DT1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil PDF