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    K4E641611 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4E641611D Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Extended Data Out Data Sheet Original PDF

    K4E641611 Datasheets Context Search

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    K4E641611D

    Abstract: K4E661611D
    Text: K4E661611D, K4E641611D CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this


    Original     		PDF K4E661611D, K4E641611D 16bit 4Mx16 K4E66161 400mil K4E641611D K4E661611D

    k4e641611c

    Abstract: No abstract text available
    Text: K4E661611C, K4E641611C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-50 or -60) are optional features of this


    Original     		PDF K4E661611C, K4E641611C 16bit 4Mx16 K4E66161 400mil k4e641611c

    Untitled

    Abstract: No abstract text available
    Text: K4E661611B,K4E641611B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -50 or -60) are optional features of this


    Original     		PDF K4E661611B K4E641611B 16bit 4Mx16 400mil

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E080 8 4CT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E080(8)4CT0-C DRAM MODULE M364E080(8)4CT0-C


    Original     		PDF M364E080 8Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE


    Original     		PDF M53640805CY0/CT0-C 8Mx36 4Mx16 M53640805CY0/CT0-C 8Mx36bits

    K4E641611C

    Abstract: No abstract text available
    Text: DRAM MODULE M53230804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230804CY0/CT0-C DRAM MODULE M53230804CY0/CT0-C


    Original     		PDF M53230804CY0/CT0-C 8Mx32 4Mx16 M53230804CY0/CT0-C 4Mx16, 8Mx32bits K4E641611C

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53230404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230404CY0/CT0-C DRAM MODULE M53230404CY0/CT0-C


    Original     		PDF M53230404CY0/CT0-C 4Mx32 4Mx16 M53230404CY0/CT0-C 4Mx16, 4Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372E0405BT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M372E0405BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M372E0405BT0-C 4Mx72 4Mx16 M372E0405BT0-C 4Mx72bits 100Min

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E040 8 4BT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M364E040(8)4BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M364E040 4Mx64 4Mx16 4Mx16, 4Mx64bits 100Min

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53640805BY0/BT0-C 8Mx36 4Mx16 M53640805BY0/BT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: M372E0805CT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM componenets are applied for this module. M372E0805CT0-C M372E0805CT0-C DRAM MODULE


    Original     		PDF M372E0805CT0-C 8Mx72 4Mx16 M372E0805CT0-C 8Mx72bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E040 8 4CT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E040(8)4CT0-C DRAM MODULE M364E040(8)4CT0-C


    Original     		PDF M364E040 4Mx64 4Mx16 4Mx16, 4Mx64bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640405CY0/CT0-C DRAM MODULE


    Original     		PDF M53640405CY0/CT0-C 4Mx36 4Mx16 M53640405CY0/CT0-C 4Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M372E0405CT0-C Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M372E0405CT0-C DRAM MODULE M372E0405CT0-C


    Original     		PDF M372E0405CT0-C 4Mx72 4Mx16 M372E0405CT0-C 4Mx72bits 4Mx16bits

    capacitor taa

    Abstract: No abstract text available
    Text: DRAM MODULE M53640405BY0/BT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53640405BY0/BT0-C 4Mx36 4Mx16 M53640405BY0/BT0-C 4Mx36bits capacitor taa

    8Mx32 dram simm

    Abstract: 8mx32 simm 72 pin
    Text: DRAM MODULE M53230804BY0/BT0-C 4Byte 8Mx32 SIMM PDpin 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53230804BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53230804BY0/BT0-C 8Mx32 4Mx16 M53230804BY0/BT0-C 4Mx16, 8Mx32bits 8Mx32 dram simm 8mx32 simm 72 pin