K4B1G0846E Search Results

samsung dimm DDR3 SPD

Abstract: M378B2873EH1-CF7 samsung ddr3 Samsung ddr3 1600 SDRAM hcf7 K4B1G0846E DDR3 DIMM SPD JEDEC DDR3 SPD sensor ddr3 spd samsung
Contextual Info: SERIAL PRESENCE DETECT M378B2873EH1-CF7/CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 1 Row # of banks in component : 8 Banks Feature : 30mm height & single sided component

DDR3 x16 rank pcb layout

Abstract: DDR3 pcb layout guide K4B1G1646E-HCF8 K4B1G0846E-HCF8
Contextual Info: Rev. 1.51, Nov. 2010 K4B1G0446E K4B1G0846E K4B1G1646E 1Gb E-die DDR3 SDRAM 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

M471B2873EH1-CF7

Abstract: Samsung ddr3 1600 SDRAM samsung ddr3 ddr3 spd samsung
Contextual Info: SERIAL PRESENCE DETECT M471B2873EH1-CF7/CF8/CH9/CK0 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 1 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component

SSTE32882

Abstract: samsung dimm DDR3 SPD HCH9 CF804 LVDDR3 K4B1G0846E samsung ddr3 RC10 RC11 RC12
Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF704/CF804/CH904/CK004 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component

samsung dimm DDR3 SPD

Abstract: SSTE32882 inphi samsung ddr3 RC10 RC11 RC12 HCH9 ddr3 spd samsung inphi* rcd
Contextual Info: SERIAL PRESENCE DETECT M393B5673EH1-CF701/CF801/CH901/CK001 Organization : 256M x 72 Composition : 128M x 8 * 18ea Used component part # : K4B1G0846E-HCF7/HCF8/HCH9/HCK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 30mm height & double sided component

ddr3 spd samsung

Abstract: M471B5673 M471B5673EH1-CF7 DDR3 SODIMM SPD JEDEC DDR3 SPD Revision 1.1 samsung ddr3 01H00H ddr3 samsung raw card DDR3 samsung DDR3 spd
Contextual Info: SERIAL PRESENCE DETECT M471B5673EH1-CF7/CF8/CH9/CK0 Organization : 256M x 64 Composition : 128M x 8 * 16ea Used component part # : K4B1G0846E-HCF7/CF8/CH9/CK0 # of rows in module : 2 Rows # of banks in component : 8 Banks Feature : 30mm height & double sided component

K4B1G1646E-HCH9

Abstract: K4B1G1646E-HCF8 k4b1g1646e K4B1G0846E K4B1G0846E-HCF8 K4B1G1646E-HCK0 DDR3 DRAM layout DDR3 pcb layout DDR3 x16 rank pcb layout K4B1G0446E
Contextual Info: Rev. 1.4, Nov. 2009 K4B1G0446E K4B1G0846E K4B1G1646E 1Gb E-die DDR3 SDRAM 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

M393B5170EH1-CF8

Abstract: M393B2873EH1 M393B5170EH1 M393B5670EH1
Contextual Info: DDR3 SDRAM Registered DIMM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

M378B2873EH1-CF8

Abstract: m391b2873eh1-cf8 M378B
Contextual Info: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 1Gb E-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

PC3-10600R-09-10-E1-P1

Abstract: PC3-10600R-09-10-E1-D2 M393B5170EH1-CH9 10600R M393B5170EH1 samsung DDR3 SDRAM 2GB raw card DDR3 PC3 10600R PC3-10600R-09-10-E1 DDR3 VLP Unbuffered DIMM
Contextual Info: May. 2010 DDR3 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.

Contextual Info: SG5127RD312893UUD February 21, 2009 Ordering Information Part Numbers Description Device Vendor SG5127RD312893HBD 512Mx72 4GB , DDR3, 240-pin Registered DIMM, Parity, ECC, 128Mx8 Based, PC3-10600, DDR3-1333-999, 30.00mm, Green Module (RoHS Compliant). Hynix, Rev. B

Contextual Info: Product Specifications PART NO.: VL47B2863A-F8SE-I REV: 1.0 General Information 1GB 128Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B2863A is a 128Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with

Contextual Info: Product Specifications PART NO.: VL47B5663A-F8SE-I REV: 1.0 General Information 2GB 256Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5663A is a 256Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with

M391B5673EH1-CF8

Abstract: k4b1g1646 M378B2873EH1-CF8 K4B1G0846E m391b M391B2873EH1 m391b5673 M378B5673EH1-CF8 M378B2873EH1-C m391b2873eh1-cf8
Contextual Info: DDR3 SDRAM Unbuffered DIMM DDR3 SDRAM Specification 240pin Unbuffered DIMM based on 1Gb E-die 64/72-bit Non-ECC/ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

M471B5673EH1-CF8

Abstract: M471B2873EH1-CF8 M471B2874EH1-CF8 M471B2873EH1 K4B1G1646E M471B5673 DDR3-1066 DDR3-1333 SSTL-15 M471B5673EH1
Contextual Info: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb E-die 64-bit Non-ECC 78/96 FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Contextual Info: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM

Contextual Info: Product Specifications PART NO.: VL51B2863F-K9S/F8S/F7S REV: 1.1 General Information 1GB 128Mx72 DDR3 SDRAM ULP ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B2863F is a 128Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module is single rank, consists

Contextual Info: Product Specifications PART NO.: VL51B5263A-K9S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin MLF

K4B1G1646E-HCH9

Abstract: K4B1G1646E-HCF8 K4B1G1646E-HCK0 K4B1G0846E-HCF7 k4b1g1646e K4B1G0846E-HCF8 samsung ddr3 K4B1G0446E-HCF7 DDR3 DIMM 240 pinout K4B1G0846E
Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46E 1Gb E-die DDR3 SDRAM Specification 78 / 96 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

DDR3 DIMM 240 pinout

Abstract: K4B1G0846B Design Guide for DDR3-1066 M393B5170EH1-CF8 DDR3 DIMM K4B1G0846B-HC M393B5170EH1 ddr3 RDIMM pinout DDR3 RDIMM samsung m393
Contextual Info: DDR3 SDRAM Registered DIMM DDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

DQ56

Abstract: K4B1G0846E A6211 DDR3-1333 PC3-10600 DDR3 miniDIMM JEDEC NC177
Contextual Info: Product Specifications PART NO.: VL51B5263A-K9S REV: 1.0 General Information 4GB 512Mx72 DDR3 SDRAM ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B5263A is a 512Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, and a 2K EEPROM in an 8-pin MLF

Contextual Info: Product Specifications PART NO.: VL47B2863A-F8SE REV: 1.0 General Information 1GB 128Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B2863A is a 128Mx64 DDR3 SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 128Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with

K4B1G0846E-HCH9

Abstract: DDR3 miniDIMM JEDEC DDR3 timing diagram DDR3-1066 DDR3-1333 PC3-10600 samsung ddr3 minidimm JEDEC A6211
Contextual Info: Product Specifications PART NO.: VL51B2863F-K9S/F8S/F7S REV: 1.1 General Information 1GB 128Mx72 DDR3 SDRAM ULP ECC UNBUFFERED Mini-DIMM 244-PIN Description The VL51B2863F is a 128Mx72 DDR3 SDRAM high density Mini-DIMM. This memory module is single rank, consists

ULCE0505A015FR

Abstract: HR911130C RTL8211E ULCE0505A015 HR911130 1c34 HY911130C axp209 BGA441-A20 1N5819 SOD-123
Contextual Info: 5 4 3 2 D 4 SDQ[31:0] SDQ[31:0] C 4 4 4 4 4 B 4 SA[14:0] 4 SDQS[3:0] SDQM[3:0] SVREF SVREF SDQS[3:0] SDQM[3:0] 1,4 SDQS0# 1,4 SDQS1# 1,4 SDQS2# 1,4 SDQS3# SDQS0 SDQS0# SDQS1 SDQS1# SDQS2 SDQS2# SDQS3 SDQS3# SDQM0 SDQM1 SDQM2 SDQM3 SCK#A SCKA SCK#A SCKA SA[14:0]