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    K436W Price and Stock

    NXP Semiconductors BUK436W-800B

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 800 V; JESD-30 Code: R-PSFM-T3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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    Vyrian BUK436W-800B 185
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    NXP Semiconductors BUK436W-60A

    Limited Part Number Data;
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    Vyrian BUK436W-60A 179
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    NXP Semiconductors BUK436W-200A

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 76 A; Maximum Operating Temperature: 150 Cel;
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    Vyrian BUK436W-200A 171
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    NXP Semiconductors BUK436W-1000B

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
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    Vyrian BUK436W-1000B 155
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    NXP Semiconductors BUK436W-200B,127

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; Minimum DS Breakdown Voltage: 200 V; Transistor Application: SWITCHING;
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    Vyrian BUK436W-200B,127 140
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    K436W Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUK436W-1000B

    Abstract: T0247
    Text: Product specification Philips Sem iconductors Pow erM O S tran sisto r N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and


    OCR Scan     		BUK436W-1000B OT429 TQ247) T0247) OT429 BUK436W-1000B T0247 PDF

    BUK436-800A

    Abstract: BUK436-800B T0247
    Text: Product specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N -channel enh an cem en t m ode field-effect pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies SM PS , m otor control, w elding,


    OCR Scan     		BUK436W-800A/B OT429 T0247) -800A -800B OT429 BUK436-800A BUK436-800B T0247 PDF

    k436w

    Abstract: 636 transistor sd 636 transistor
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		K436W-200A/B BUK436 -200A -200B OT429 T0247) BUK436W-200A/B k436w 636 transistor sd 636 transistor PDF

    BUK436-200A

    Abstract: BUK436-200B T0247
    Text: Product Specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N -channel enh an cem en t m ode field-effect pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies SM PS , m otor control, w elding,


    OCR Scan     		BUK436W-200A/B OT429 T0247) -200A -200B OT429 BUK436-200A BUK436-200B T0247 PDF