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Toshiba America Electronic Components TK40A10N1,S4X MOSFET N-CH 100V 40A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK40A10N1,S4X	Tube			1	1 $2.94 10 $2.94 100 $1.3187 1000 $0.98633 10000 $0.92875	Buy Now
Mouser Electronics	TK40A10N1,S4X		150			1 $2.56 10 $2.06 100 $1.31 1000 $0.928 10000 $0.928	Buy Now
Toshiba America Electronic Components TK40A10N1 Trans MOSFET N-CH 100V 90A 3-Pin TO-220SIS - Rail/Tube (Alt: TK40A10N1,S4X)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK40A10N1	Tube		16 Weeks	50	1 - 10 - 100 $0.86931 1000 $0.82473 10000 $0.82473	Buy Now
Vishay Intertechnologies VS-43CTQ100SHM3 Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	VS-43CTQ100SHM3	Tube			1,000	1 - 10 - 100 - 1000 $1.3 10000 $1.24	Buy Now
Vishay Intertechnologies VS-43CTQ100STRRHM3 Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	VS-43CTQ100STRRHM3	Reel			800	1 - 10 - 100 - 1000 $1.25 10000 $1.25	Buy Now
Toshiba America Electronic Components TK40A10N1S4XS MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TK40A10N1S4XS		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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K40A10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K40A10K3 Abstract: TK40A10K3 Contextual Info: K40A10K3 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSⅣ K40A10K3 スイッチングレギュレーター用単位: mm : RDS (ON) = 11.5 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 80 S (標準)	Original	TK40A10K3 SC-67 2-10U1B K40A10K3 TK40A10K3	PDF
TK40A10J1 Abstract: K40A10J Contextual Info: K40A10J1 東芝電界効果トランジスタシリコンNチャネルMOS形超高速U-MOSⅢ K40A10J1 スイッチングレギュレーター用単位: mm z ゲート入力電荷量が小さい。 : Qg= 76 nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 90 S (標準)	Original	TK40A10J1 SC-67 2-10U1B TK40A10J1 K40A10J	PDF
K40A10J Abstract: k40a10 K40A Contextual Info: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •	Original	TK40A10J1 K40A10J k40a10 K40A	PDF
TK40A10J1 Contextual Info: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •	Original	TK40A10J1 TK40A10J1	PDF
K40A10K3 Abstract: TK40A10K3 k40a10 Contextual Info: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)	Original	TK40A10K3 K40A10K3 TK40A10K3 k40a10	PDF
Contextual Info: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)	Original	TK40A10K3 137led	PDF