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    Toshiba America Electronic Components 2SK3798(STA4,Q,M)

    POWER MOSFET TRANSISTOR TO-220(S
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    DigiKey 2SK3798(STA4,Q,M) Tube 50
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    • 100 $0.9618
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    Mouser Electronics 2SK3798(STA4,Q,M) 250
    • 1 $1.47
    • 10 $1
    • 100 $0.982
    • 1000 $0.852
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    Bristol Electronics 2SK3798(STA4,Q,M) 40 3
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    • 100 $1.4062
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    Toshiba America Electronic Components 2SK3798(STA4

    MOSFET N-Channel Enhancement Mode 900V 3-Pin SC-67 - Rail/Tube (Alt: 2SK3798(STA4,Q,M))
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    Avnet Americas 2SK3798(STA4 Tube 32 Weeks 50
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    • 100 $0.61388
    • 1000 $0.5562
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    Toshiba America Electronic Components 2SK3798(Q)

    Trans MOSFET NCH 900V 4A 3Pin3Tab TO220SIS (Alt: 2SK3798(Q))
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    EBV Elektronik 2SK3798(Q) 26 Weeks 50
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    K3798 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3798

    Abstract: 2SK3798 K379
    Text: K3798 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		2SK3798 SC-67 2-10U1B k3798 2SK3798 K379 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 PDF

    k3798

    Abstract: 2SK3798
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		2SK3798 k3798 2SK3798 PDF

    k3798

    Abstract: 2SK3798 equivalent 2SK3798 K379
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 k3798 2SK3798 equivalent 2SK3798 K379 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 PDF

    k3798

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 k3798 PDF

    k3798

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 k3798 PDF

    k3798

    Abstract: 2SK3798
    Text: K3798 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV K3798 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.5 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		2SK3798 SC-67 2-10U1B k3798 2SK3798 PDF

    K3798

    Abstract: 2SK3798
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3798 K3798 2SK3798 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		2SK3798 PDF