Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K3757 Search Results

    SF Impression Pixel

    K3757 Price and Stock

    Vishay Intertechnologies CRCW060319R6FKEA

    Thick Film Resistors - SMD 1/10watt 19.6ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CRCW060319R6FKEA Reel 20,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.00376
    		Buy Now

    Ohmite Mfg Co B20J1R0E

    Wirewound Resistors - Through Hole 20watt 1ohm 5% Axial
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI B20J1R0E Bulk 75 25
    • 1 -
    • 10 -
    • 100 $5.31
    • 1000 $5
    • 10000 $5
    		Buy Now

    K3757 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3757

    Abstract: 2SK3757
    Text: K3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)


    Original     		2SK3757 SC-67 2-10U1B K3757 2SK3757 PDF

    K3757

    Abstract: toshiba marking code transistor
    Text: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3757 K3757 toshiba marking code transistor PDF

    K3757

    Abstract: 2SK3757
    Text: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2SK3757 K3757 2SK3757 PDF

    K3757

    Abstract: 2SK3757
    Text: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 450 V)


    Original     		2SK3757 K3757 2SK3757 PDF

    K3757

    Abstract: 2SK3757 C-12180 mos 245
    Text: K3757 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ K3757 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.9 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 1.0 S (標準)


    Original     		2SK3757 SC-67 2-10U1B K3757 2SK3757 C-12180 mos 245 PDF

    k3757

    Abstract: 2SK3757 A/equivalent 2sk3757
    Text: K3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3757 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3757 k3757 2SK3757 A/equivalent 2sk3757 PDF