Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K3563 APPLICATIONS Search Results

    K3563 APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    K3563 APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3563 Transistor

    Abstract: K3563 transistor k3563 2SK3563 k356
    Text: TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


    Original     		PDF 2SK3563 K3563 Transistor K3563 transistor k3563 2SK3563 k356

    K3563 Transistor

    Abstract: K3563 2sk3563 transistor 625
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 Transistor K3563 2sk3563 transistor 625

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet k356
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet k356

    K3563 Transistor

    Abstract: K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 Transistor K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		PDF 2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
    Text: 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original     		PDF 2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications