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    K3563 Search Results

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    K3563 Price and Stock

    VPG Transducers Y07868K35630T9L

    RES 8.3563KOHM 0.6W 0.01% RADIAL
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    DigiKey Y07868K35630T9L Bulk 25
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    Avnet Americas Y07868K35630T9L Bulk 25
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    • 100 $14.4624
    • 1000 $11.323
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    VPG Transducers Y07938K35630T9L

    RES 8.3563KOHM 0.6W 0.01% RADIAL
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    DigiKey Y07938K35630T9L Bulk 25
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    • 100 $18.8012
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    Avnet Americas Y07938K35630T9L Bulk 25
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    VPG Transducers Y07868K35630T0L

    RES 8.3563KOHM 0.6W 0.01% RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey Y07868K35630T0L Bulk 25
    • 1 -
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    • 100 $21.816
    • 1000 $21.816
    • 10000 $21.816
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    Avnet Americas Y07868K35630T0L Bulk 25
    • 1 -
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    • 100 $14.4624
    • 1000 $11.323
    • 10000 $11.323
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    VPG Transducers Y07938K35630T0L

    RES 8.3563KOHM 0.6W 0.01% RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey Y07938K35630T0L Bulk 25
    • 1 -
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    • 100 $18.8012
    • 1000 $18.8012
    • 10000 $18.8012
    Buy Now
    Avnet Americas Y07938K35630T0L Bulk 25
    • 1 -
    • 10 -
    • 100 $12.1026
    • 1000 $9.464
    • 10000 $9.464
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    Vishay Intertechnologies CRCW2010100RFKEF

    Thick Film Resistors - SMD 3/4watt 100ohms 1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CRCW2010100RFKEF Reel 228,000 4,000
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    K3563 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k3563

    Abstract: 2sK3563 2sK3563 datasheet
    Text: K3563 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3563 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.5 S (標準)


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    2SK3563 SC-67 2-10U1B k3563 2sK3563 2sK3563 datasheet PDF

    K3563

    Abstract: K3563 Transistor 2sK3563 datasheet 2sK3563
    Text: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


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    2SK3563 K3563 K3563 Transistor 2sK3563 datasheet 2sK3563 PDF

    K3563 Transistor

    Abstract: K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications
    Text: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


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    2SK3563 K3563 Transistor K3563 2SK3563 K356 K3563 Transistor test transistor k3563 K3563 applications PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications
    Text: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


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    2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet K3563 applications PDF

    K3563

    Abstract: K3563 Transistor 2SK3563 2sK3563 datasheet k356
    Text: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


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    2SK3563 K3563 K3563 Transistor 2SK3563 2sK3563 datasheet k356 PDF

    K3563 Transistor

    Abstract: K3563 2sk3563 transistor 625
    Text: K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI K3563 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


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    2SK3563 K3563 Transistor K3563 2sk3563 transistor 625 PDF

    K3563 Transistor

    Abstract: K3563 transistor k3563 2SK3563 k356
    Text: TENTATIVE K3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ K3563 unit:mm Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


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    2SK3563 K3563 Transistor K3563 transistor k3563 2SK3563 k356 PDF