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    Pizzato Elettrica Srl FK 3453-E0V9

    Position switch with porcelain roller lever | Pizzato USA FK 3453-E0V9
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    Pizzato Elettrica Srl FK 3453-E0M1V9

    Position switch with porcelain roller lever | Pizzato USA FK 3453-E0M1V9
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    RS FK 3453-E0M1V9 Bulk 8 Weeks 1
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    K3453 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK3453

    Abstract: No abstract text available
    Text: K3453 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIV K3453 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.72 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 7.0 S (標準)


    Original     		2SK3453 2-16F1B 2SK3453 PDF

    2SK3453

    Abstract: No abstract text available
    Text: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)


    Original     		2SK3453 2SK3453 PDF

    NC marking transistor

    Abstract: 2SK3453 K3453
    Text: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)


    Original     		2SK3453 NC marking transistor 2SK3453 K3453 PDF

    2SK3453

    Abstract: K3453
    Text: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)


    Original     		2SK3453 2SK3453 K3453 PDF

    2SK3453

    Abstract: No abstract text available
    Text: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)


    Original     		2SK3453 2SK3453 PDF

    K3453

    Abstract: 2SK345
    Text: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)


    Original     		2SK3453 K3453 2SK345 PDF

    Untitled

    Abstract: No abstract text available
    Text: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV K3453 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 700 V)


    Original     		2SK3453 PDF

    K3453

    Abstract: No abstract text available
    Text: K3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3453 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.72 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 700 V)


    Original     		2SK3453 K3453 PDF