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    K3399 Price and Stock

    Ruland Manufacturing Co Inc MBCK33-9-9-A

    9MMX9MM BELLOWS COUPLING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBCK33-9-9-A Bag 1
    • 1 $223.95
    • 10 $223.95
    • 100 $223.95
    • 1000 $223.95
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    Ruland Manufacturing Co Inc MDCSK33-9-9-A

    9 MM X 9 MM DISC COUPLING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MDCSK33-9-9-A Bag 1
    • 1 $216.19
    • 10 $216.19
    • 100 $216.19
    • 1000 $216.19
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    Ruland Manufacturing Co Inc MDCDK33-9-9-A

    9 MM X 9 MM DISC COUPLING
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MDCDK33-9-9-A Bag 1
    • 1 $257.55
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    • 100 $257.55
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    CHERRY Embedded Solutions SOM-RK3399-Q7 2.3-C-2GB-16GB

    System-On-Modules - SOM System-on-Module (SOM) is a low-power, high-performance processor for computing, personal mobile internet devices, and other smart device applications. 4GB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOM-RK3399-Q7 2.3-C-2GB-16GB 60
    • 1 $160.18
    • 10 $150.14
    • 100 $140.4
    • 1000 $140.4
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    CHERRY Embedded Solutions EVK-RK3399-Q7

    Development Boards & Kits - ARM The compact Mini-ITX Baseboard includes a pre-installed RK3399-Q7 SoM, plus a host of peripherals and interfaces, including HDMI, USB, PCIe, and more. The Theobroma Systems Baseboard operates with a single 12V DC power supply
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EVK-RK3399-Q7 12
    • 1 $473.16
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    • 100 $473.16
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    K3399 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3399

    Abstract: K3399 k339
    Text: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) · High forward transfer admittance: |Yfs| = 5.2 S (typ) · Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 2SK3399 K3399 k339

    K3399

    Abstract: 2SK3399
    Text: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 600 V)


    Original     		PDF 2SK3399 K3399 2SK3399

    Untitled

    Abstract: No abstract text available
    Text: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399

    K3399

    Abstract: k339 2SK3399
    Text: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 K3399 k339 2SK3399

    k3399

    Abstract: No abstract text available
    Text: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 µA (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 k3399

    K3399

    Abstract: 2SK3399 MJ10050
    Text: K3399 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV K3399 ○ スイッチングレギュレータ用 • 単位: mm オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) • 順方向伝達アドミタンスが高い。: |Yfs| = 5.2 S (標準)


    Original     		PDF 2SK3399 2-10S1B K3399 2SK3399 MJ10050

    K3399

    Abstract: 2SK3399
    Text: K3399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3399 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ) • High forward transfer admittance: |Yfs| = 5.2 S (typ) • Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)


    Original     		PDF 2SK3399 K3399 2SK3399