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Toshiba America Electronic Components TK2Q60D(Q) MOSFET N-CH 600V 2A PW-MOLD2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK2Q60D(Q)	Bulk	200		1	1 $1.24 10 $0.813 100 $0.813 1000 $0.38111 10000 $0.29875	Buy Now
Avnet Americas	TK2Q60D(Q)	Reel		12 Weeks	200	1 - 10 - 100 - 1000 $0.27485 10000 $0.26529	Buy Now
Mouser Electronics	TK2Q60D(Q)		600			1 $1.17 10 $0.797 100 $0.638 1000 $0.339 10000 $0.314	Buy Now
EBV Elektronik	TK2Q60D(Q)			19 Weeks	3,600	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K2Q60D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: K2Q60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K2Q60D ○ スイッチングレギュレータ用 6.5 ± 0.2 オン抵抗が低い。 : RDS (ON) = 3.2 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 1.0 S (標準)	Original	TK2Q60D	PDF
K2Q60D Abstract: TK2Q60D Contextual Info: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK2Q60D K2Q60D TK2Q60D	PDF
K2Q60D Abstract: TK2Q60D Contextual Info: K2Q60D 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅦ K2Q60D ○ スイッチングレギュレータ用 6.5 ± 0.2 オン抵抗が低い。 : RDS (ON) = 3.3 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 1.0 S (標準)	Original	TK2Q60D K2Q60D TK2Q60D	PDF
Contextual Info: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 Low drain-source ON-resistance: RDS (ON) = 3.2 (typ.) High forward transfer admittance: \|Yfs\| = 1.0 S (typ.)	Original	TK2Q60D	PDF
Contextual Info: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK2Q60D	PDF
K2Q60D Abstract: TK2Q60D Contextual Info: K2Q60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K2Q60D Switching Regulator Applications 1.5 ± 0.2 Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.3 Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)	Original	TK2Q60D K2Q60D TK2Q60D	PDF