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K20N60 Price and Stock

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Alpha & Omega Semiconductor AOK20N60L MOSFET N-CH 600V 20A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AOK20N60L	Tube	98		1	1 $4.4 10 $4.4 100 $2.628 1000 $2.628 10000 $2.628	Buy Now
Toshiba America Electronic Components TK20N60W,S1VF MOSFET N-CH 600V 20A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20N60W,S1VF	Tube	36		1	1 $6.82 10 $6.82 100 $3.917 1000 $2.88749 10000 $2.88749	Buy Now
Mouser Electronics	TK20N60W,S1VF		30			1 $6.09 10 $5.97 100 $3.64 1000 $2.88 10000 $2.88	Buy Now
Toshiba America Electronic Components TK20N60W5,S1VF MOSFET N-CH 600V 20A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK20N60W5,S1VF	Tube	29		1	1 $4.72 10 $4.72 100 $2.631 1000 $1.83443 10000 $1.7625	Buy Now
Mouser Electronics	TK20N60W5,S1VF					1 $4.31 10 $4.03 100 $2.42 1000 $1.8 10000 $1.76	Get Quote
Toshiba America Electronic Components TK20N60W5 Trans MOSFET N-CH 600V 20A 3-Pin TO-247 - Rail/Tube (Alt: TK20N60W5,S1VF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK20N60W5	Tube		20 Weeks	30	1 - 10 - 100 $2.1009 1000 $1.9035 10000 $1.9035	Buy Now
Toshiba America Electronic Components TK20N60W Trans MOSFET N-CH 600V 20A 3-Pin TO-247 - Rail/Tube (Alt: TK20N60W,S1VF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK20N60W	Tube		20 Weeks	30	1 - 10 - 100 $3.4419 1000 $3.1185 10000 $3.1185	Buy Now
Bristol Electronics	TK20N60W		9		3	1 - 10 $1.95 100 $1.95 1000 $1.95 10000 $1.95	Buy Now

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K20N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
k20N60hs Abstract: k20n60 Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs k20n60
k20n60 Abstract: No abstract text available Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKW20N60 SKW20N60 k20n60
k20n60 Abstract: SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKW20N60 PG-TO-247-3 k20n60 SKW20N60 100w 24v 5a IGBT igbt 400V 20A PG-TO-247-3 IGBT 100W 24V 5A
k20n60 Abstract: k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS Text: SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW20N60HS PG-TO-247-3 K20N60HS k20n60 k20N60hs RY 227 Tf 227 10A PG-TO-247-3 igbt 400V 20A SKW20N60HS
k20N60hs Abstract: K20N60 power Diode 400V 20A Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW20N60HS PG-TO-247-3-21 SKW20N60HS k20N60hs K20N60 power Diode 400V 20A
Untitled Abstract: No abstract text available Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls	Original	PDF	SKW20N60
k20n60 Abstract: SKW20N60 Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKW20N60 SKW20N60 k20n60
k20n60 Abstract: igbt 400V 20A Text: SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls	Original	PDF	SKW20N60 SKW20N60 k20n60 igbt 400V 20A
k20N60hs Abstract: k20n60 Text: SKW20N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60
k20N60hs Abstract: k20n60 Text: SKW20N60HS Preliminary ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKW20N60HS PG-TO-247-3-1 Q67040-S4502 PG-TO-247-3-1 O-247AC) SKW20N60HS k20N60hs k20n60