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Catalog Datasheet	Type	Document Tags	PDF
transistor d261 Abstract: D255 Contextual Info: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN	Original	K1B5616BBM 256Mb transistor d261 D255	PDF
K1B5616BBM Abstract: K1B2816B2A K1B5616B2M K1B5616BAM Contextual Info: Mode, Status & current during Power Up This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA Aug. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD	Original	K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA 200us K1B5616BBM K1B2816B2A K1B5616B2M K1B5616BAM	PDF
UtRAM Abstract: K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H Contextual Info: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA - K1B6416B6C, K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD	Original	K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA K1B6416B6C, K1B3216BDD 5555h) 5555h UtRAM K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H	PDF
Contextual Info: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN	Original	K1B5616BBM 256Mb	PDF
Contextual Info: K1B5616BBM UtRAM 256Mb 16M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN	Original	K1B5616BBM 256Mb	PDF
K1B2816B2A Abstract: bba 1st K1B5616B2M K1B5616BAM K1B5616BBM K1S56161CM Contextual Info: Technical Note on tBC This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM, K1S5616BCM, K1S56161CM - K1B2816B2A, K1B2816BAA, K1B2816BBA, K1S2816BCA, K1S28161CA June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION	Original	K1B5616B2M, K1B5616BAM, K1B5616BBM, K1S5616BCM, K1S56161CM K1B2816B2A, K1B2816BAA, K1B2816BBA, K1S2816BCA, K1S28161CA K1B2816B2A bba 1st K1B5616B2M K1B5616BAM K1B5616BBM K1S56161CM	PDF
K1B5616BBM Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density Contextual Info: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN	Original	K1B5616BA 256Mb K1B5616BBM D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density	PDF