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    K18A50D Search Results

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    K18A50D Price and Stock

    Toshiba America Electronic Components TK18A50D(STA4,Q,M)

    MOSFET N-CH 500V 18A TO220SIS
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    DigiKey TK18A50D(STA4,Q,M) Tube 52 1
    • 1 $4.35
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    • 1000 $1.58
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    Mouser Electronics TK18A50D(STA4,Q,M) 108
    • 1 $3.97
    • 10 $3.55
    • 100 $2.08
    • 1000 $1.58
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    Chip1Stop TK18A50D(STA4,Q,M) Tube 42
    • 1 $2.45
    • 10 $1.83
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    EBV Elektronik TK18A50D(STA4,Q,M) 19 Weeks 50
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    Toshiba America Electronic Components TK18A50D(STA4QM)

    Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK18A50D(STA4,Q,M))
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    Avnet Americas TK18A50D(STA4QM) Tube 32 Weeks 50
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    • 100 $1.88336
    • 1000 $1.7064
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    Toshiba America Electronic Components TK18A50D(STA4,X,M)

    Mosfet, N-Ch, 500V, 18A, Sc-67; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:-Rohs Compliant: Yes |Toshiba TK18A50D(STA4,X, M)
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    Newark TK18A50D(STA4,X,M) Bulk 34 1
    • 1 $2.16
    • 10 $1.84
    • 100 $1.48
    • 1000 $1.23
    • 10000 $0.961
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    EBV Elektronik TK18A50D(STA4,X,M) 19 Weeks 50
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    Toshiba America Electronic Components TK18A50D,S5Q(J

    N-ch 500V/18A/0.27Ω
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    Chip1Stop TK18A50D,S5Q(J Bulk 3
    • 1 $2.64
    • 10 $2.64
    • 100 $2.64
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    Toshiba America Electronic Components TK18A50D

    MOSFET N-CH 500V 18A TO-220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics TK18A50D 37,580
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    • 100 $0.95
    • 1000 $0.633
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    K18A50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK18A50D

    K18A50D

    Abstract: TK18A50D k18a50
    Text: K18A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K18A50D スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.23 Ω (標準) オン抵抗が低い。 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK18A50D SC-67 2-10U1B K18A50D TK18A50D k18a50

    K18a50d

    Abstract: k18a50 TK18A50D K*A50D K18A
    Text: K18A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K18A50D 単位: mm スイッチングレギュレータ用 : RDS (ON) = 0.22 Ω (標準) オン抵抗が低い。 : |Yfs| = 8.5 S (標準) 順方向伝達アドミタンスが高い。


    Original     		PDF TK18A50D SC-67 2-10U1B K18a50d k18a50 TK18A50D K*A50D K18A

    K18a50d

    Abstract: k18a50 TK18A50D Silicon N Channel MOS Type Switching Regulator
    Text: K18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK18A50D K18a50d k18a50 TK18A50D Silicon N Channel MOS Type Switching Regulator

    k18a50

    Abstract: No abstract text available
    Text: K18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK18A50D k18a50

    K18a50d

    Abstract: k18a50 TK18A50D K18A
    Text: K18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K18A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)


    Original     		PDF TK18A50D K18a50d k18a50 TK18A50D K18A