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Catalog Datasheet	MFG & Type	PDF	Document Tags
K15N60 Abstract: SKB15N60HS PG-TO263-3-2 T150H Text: SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS PG-TO263-3-2 K15N60HS K15N60 SKB15N60HS PG-TO263-3-2 T150H
K15N60 Abstract: K15N60HS Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS K15N60HS P-TO-220-3-45 SKB15N60HS K15N60
K15N60 Abstract: K15N60HS Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS K15N60HS P-TO-220-3-45 SKB15N60HS K15N60
K15N60 Abstract: No abstract text available Text: SKB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability	Original	PDF	SKB15N60HS K15N60HS P-TO-263-3-2 Q67040S4543 P-TO-263-3-2 O-263AB) SKB15N60HS K15N60