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Toshiba America Electronic Components TK13A65U(STA4,Q,M) MOSFET N-CH 650V 13A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK13A65U(STA4,Q,M)	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK13A65U MOSFET N-CH 650V 13A TO-220SIS / Trans MOSFET N-CH Si 650V 13A 3-Pin(3+Tab) TO-220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	TK13A65U		242,380			1 - 10 - 100 $0.9561 1000 $0.7403 10000 $0.7403	Buy Now
Toshiba America Electronic Components TK13A65U(STA4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	TK13A65U(STA4		10,000			1 - 10 - 100 $2.814 1000 $2.523 10000 $2.523	Buy Now

K13A65U Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
K13A65U Abstract: TK13A65U k13a65 650VVGS marking code TC Silicon N Channel MOS Type Switching Regulator Text: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	PDF	TK13A65U K13A65U TK13A65U k13a65 650VVGS marking code TC Silicon N Channel MOS Type Switching Regulator
K13A65U Abstract: TK13A65U k13a65 k13a Text: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	PDF	TK13A65U K13A65U TK13A65U k13a65 k13a
k13a65 Abstract: No abstract text available Text: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	PDF	TK13A65U k13a65
Untitled Abstract: No abstract text available Text: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V)	Original	PDF	TK13A65U
K13A65U Abstract: k13a65 TK13A65U 65A10 Text: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOSⅡ K13A65U Switching Regulator Applications VDSS 650 V Gate-source voltage VGSS ±30 V (Note 1) ID 13 Pulse (t = 1 ms) (Note 1) IDP 26 Drain power dissipation (Tc = 25°C) PD 40 W	Original	PDF	TK13A65U K13A65U k13a65 TK13A65U 65A10
K13A65U Abstract: TK13A65U K13A65 2-10U1B Text: K13A65U 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOSⅡ K13A65U ○ スイッチングレギュレータ用 : Vth = 3.0～5.0 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 記号定格単位ドレイン・ソース間電圧	Original	PDF	TK13A65U K13A65U TK13A65U K13A65 2-10U1B
K13A65U Abstract: TK13A65U k13a65 Text: K13A65U 東芝電界効果トランジスタシリコンNチャネルMOS形 DTMOSⅡ K13A65U ○ スイッチングレギュレータ用 : Vth = 3.0～5.0 V (VDS = 10 V, ID = 1 mA) 0.69 ± 0.15 Ф0.2 M A 記号定格単位ドレイン・ソース間電圧	Original	PDF	TK13A65U K13A65U TK13A65U k13a65
K13A65U Abstract: No abstract text available Text: K13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type DTMOS II K13A65U Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)	Original	PDF	TK13A65U K13A65U