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    K13A50D TRANSISTOR Search Results

    K13A50D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

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    K13A50D transistor

    Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D K13A50D transistor K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D PDF

    K13A50D transistor

    Abstract: k13a50 K13A50D TK13A50D K*A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D K13A50D transistor k13a50 K13A50D TK13A50D K*A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D PDF

    K13A50D 2.0 transistor

    Abstract: K13A50D transistor K13A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		TK13A50D K13A50D 2.0 transistor K13A50D transistor K13A50D PDF