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    K1381 Price and Stock

    Sensata Circuit Breakers LELK1-38159-1-V

    CIR BRKR,HYDMAG
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    DigiKey LELK1-38159-1-V Bulk 3
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    RS LELK1-38159-1-V Bulk 7 Weeks 3
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    Master Electronics LELK1-38159-1-V
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    Sager LELK1-38159-1-V 1
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    Sensata Circuit Breakers IELK1-38136-25-V

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    DigiKey IELK1-38136-25-V Bulk 3
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    Master Electronics IELK1-38136-25-V
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    Sager IELK1-38136-25-V 1
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    Sensata Circuit Breakers LELK1-38159-10-V

    CIR BRKR,HYDMAG
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    DigiKey LELK1-38159-10-V Bulk 3
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    RS LELK1-38159-10-V Bulk 7 Weeks 3
    • 1 -
    • 10 $85.77
    • 100 $84
    • 1000 $82.69
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    Master Electronics LELK1-38159-10-V 1
    • 1 $86.053
    • 10 $58.45
    • 100 $31.73
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    Sager LELK1-38159-10-V 1
    • 1 $73.66
    • 10 $73.66
    • 100 $39.22
    • 1000 $25.68
    • 10000 $23.74
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    Sensata Circuit Breakers IELK1-38136-15-V

    CIR BRKR,HYDMAG
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    DigiKey IELK1-38136-15-V Bulk 3
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    Master Electronics IELK1-38136-15-V
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    Sager IELK1-38136-15-V 1
    • 1 $62.51
    • 10 $62.51
    • 100 $35.55
    • 1000 $21.76
    • 10000 $20.16
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    Sensata Circuit Breakers IELK1-38136-60-V

    CIR BRKR,HYDMAG
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    DigiKey IELK1-38136-60-V Bulk 3
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    RS IELK1-38136-60-V Bulk 7 Weeks 3
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    Master Electronics IELK1-38136-60-V
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    Sager IELK1-38136-60-V 1
    • 1 $87.32
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    • 100 $46.45
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    K1381 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K1381 Toshiba Field Effect Transistor Silicon N Channel MOS Type (L2-pai-MOSIII) Relay Drive, Motor Drive and DC-DC Converter Original PDF

    K1381 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance


    Original
    PDF 2SK1381

    Untitled

    Abstract: No abstract text available
    Text: K1381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original
    PDF 2SK1381

    K1381

    Abstract: 2SK1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original
    PDF 2SK1381 K1381 2SK1381

    2SK1381

    Abstract: K1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original
    PDF 2SK1381 2SK1381 K1381

    K1381

    Abstract: 2SK1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance


    Original
    PDF 2SK1381 15transportation K1381 2SK1381

    K1381

    Abstract: 2SK1381
    Text: K1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII K1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) l High forward transfer admittance


    Original
    PDF 2SK1381 K1381 2SK1381