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Toshiba America Electronic Components TK12A53D(STA4,Q,M) MOSFET N-CH 525V 12A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK12A53D(STA4,Q,M)	Tube			1	1 $3.2 10 $3.2 100 $1.4491 1000 $1.08998 10000 $1.04375	Buy Now
Mouser Electronics	TK12A53D(STA4,Q,M)					1 $3.2 10 $3.2 100 $1.45 1000 $1.08 10000 $1.08	Get Quote
Toshiba America Electronic Components TK12A53D(STA4 Trans MOSFET N-CH 525V 12A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK12A53D(STA4,Q,M))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TK12A53D(STA4	Tube		32 Weeks	50	1 - 10 - 100 $0.97695 1000 $0.92685 10000 $0.92685	Buy Now

K12A53D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K12A53D Abstract: TK12A53D Contextual Info: K12A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A53D ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.5Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	TK12A53D SC-67 2-10U1B 20070701-JA K12A53D TK12A53D	PDF
K12A53D Abstract: TK12A53D Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK12A53D K12A53D TK12A53D	PDF
Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK12A53D	PDF
K12A53D Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK12A53D K12A53D	PDF
Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK12A53D	PDF
K12A53D Abstract: TK12A53D Contextual Info: K12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K12A53D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)	Original	TK12A53D K12A53D TK12A53D	PDF
K12A53D Abstract: TK12A53D Contextual Info: K12A53D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K12A53D ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.5Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)	Original	TK12A53D SC-67 2-10U1B K12A53D TK12A53D	PDF