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    K10A60 Search Results

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    K10A60 Price and Stock

    Toshiba America Electronic Components TK10A60E,S5X

    MOSFET N-CH 600V 10A TO220SIS
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    DigiKey TK10A60E,S5X Tube
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    Toshiba America Electronic Components TK10A60W,S4X

    MOSFET N-CH 600V 9.7A TO220
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    DigiKey TK10A60W,S4X Tube 2,500
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    Toshiba America Electronic Components TK10A60D(STA4,Q,M)

    MOSFET N-CH 600V 10A TO220SIS
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    DigiKey TK10A60D(STA4,Q,M) Tube
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    EBV Elektronik TK10A60D(STA4,Q,M) 143 Weeks 2,500
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    Toshiba America Electronic Components TK10A60WS4VX

    Power MOSFET, N Channel, 600 V, 9.7 A, 380 Milliohms, TO-220SIS, 3 Pins, Through Hole - Rail/Tube (Alt: TK10A60W,S4VX)
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    Avnet Americas TK10A60WS4VX Tube 100 32 Weeks 1
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    Toshiba America Electronic Components TK10A60D(QM)

    Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK10A60D(Q,M))
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    Avnet Americas TK10A60D(QM) Tube 50
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    K10A60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k10a60d

    Abstract: No abstract text available
    Text: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D k10a60d PDF

    k10a60d

    Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
    Text: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)


    Original     		TK10A60D k10a60d toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d PDF

    k10a60d

    Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
    Text: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D k10a60d K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D PDF

    k10a60d

    Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10
    Text: K10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK10A60D SC-67 2-10U1B k10a60d TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10 PDF

    K10A60

    Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
    Text: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D K10A60 k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200 PDF

    k10a60d

    Abstract: No abstract text available
    Text: K10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		TK10A60D k10a60d PDF

    k10a60d

    Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500
    Text: K10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		TK10A60D SC-67 2-10U1B 20070701-JA k10a60d K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500 PDF