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Toshiba America Electronic Components TK10A50W,S5X X35 PB-F POWER MOSFET TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK10A50W,S5X	Tube	113		1	1 $2.58 10 $2.58 100 $1.1401 1000 $0.84543 10000 $0.775	Buy Now
Mouser Electronics	TK10A50W,S5X					1 $2.58 10 $2.58 100 $1.14 1000 $0.81 10000 $0.805	Get Quote
Toshiba America Electronic Components TK10A50D(STA4,Q,M) MOSFET N-CH 500V 10A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK10A50D(STA4,Q,M)	Tube	24		1	1 $2.1 10 $2.1 100 $1.0878 1000 $0.765 10000 $0.765	Buy Now
Mouser Electronics	TK10A50D(STA4,Q,M)		164			1 $2.1 10 $2 100 $1.11 1000 $0.765 10000 $0.765	Buy Now
EBV Elektronik	TK10A50D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK-Lambda Corporation HK10A-5-A AC/DC CONVERTER 5V 10W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HK10A-5-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Omnivision Technologies Inc OS02K10-A59A IMAGE SENSOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	OS02K10-A59A	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components TK10A55D(STA4,Q,M) MOSFET N-CH 550V 10A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK10A55D(STA4,Q,M)	Tube			1	1 $2.94 10 $2.94 100 $1.3187 1000 $0.98633 10000 $0.92875	Buy Now
Mouser Electronics	TK10A55D(STA4,Q,M)					1 $2.94 10 $2.94 100 $1.32 1000 $0.964 10000 $0.964	Get Quote

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K10A5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K10A50D Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)	Original	TK10A50D SC-67 2-10U1B 20070701-JA K10A50D K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D	PDF
K10A50D Abstract: K10A50 TK10A50D K*A50D Contextual Info: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)	Original	TK10A50D SC-67 2-10U1B K10A50D K10A50 TK10A50D K*A50D	PDF
Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK10A55D	PDF
toshiba K10A50D Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)	Original	TK10A50D toshiba K10A50D k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a	PDF
K10A5 Abstract: K10A55D Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK10A55D K10A5 K10A55D	PDF
k10a50d Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)	Original	TK10A50D k10a50d	PDF
K10A50 Abstract: K10A50D toshiba marking code transistor k10a50d Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)	Original	TK10A50D K10A50 K10A50D toshiba marking code transistor k10a50d	PDF
K10A50 Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d KA50D TK10A50D k10a50d data transistor K10a50d k10a K10A50D Contextual Info: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)	Original	TK10A50D K10A50 K10A50D toshiba K10A50D toshiba marking code transistor k10a50d KA50D TK10A50D k10a50d data transistor K10a50d k10a K10A50D	PDF
Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK10A55D	PDF
Contextual Info: K10A55D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K10A55D スイッチングレギュレータ用単位: mm : RDS (ON) = 0.56 Ω (標準) : \|Yfs\| = 6.0 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2	Original	TK10A55D	PDF
Contextual Info: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: \|Yfs\| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)	Original	TK10A55D	PDF