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Catalog Datasheet	MFG & Type	PDF	Document Tags
K02N120 Abstract: fast recovery diode 1a trr 200ns Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:	Original	PDF	SKB02N120 P-TO-220-3-45 SKB02N120 K02N120 fast recovery diode 1a trr 200ns
K02N120 Abstract: k02n12 SKP02N120 Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	PDF	SKP02N120 40lower PG-TO-220-3-1 O-220AB) SKP02N120 K02N120 k02n12
K02N120 Abstract: No abstract text available Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation  Short circuit withstand time – 10 s	Original	PDF	SKB02N120 PG-TO-263-3-2 K02N120
K02N120 Abstract: No abstract text available Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	PDF	SKB02N120 40lower P-TO-263-3-2 O-263AB) SKB02N120 K02N120 K02N120
k02n120 Abstract: 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	PDF	SKP02N120 40lower PG-TO-220-3-1 O-220AB) k02n120 15v 60w smps smps 10w 5V PG-TO-220-3-1 SKP02N120 fast recovery diode 2a trr 200ns
K02N120 Abstract: fast recovery diode 2a trr 200ns Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	PDF	SKP02N120 40lower PG-TO-220-3-1 O-220AB) SKP02N120 K02N120 fast recovery diode 2a trr 200ns
1200V Abstract: P-TO220-3-45 K02N120 Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:	Original	PDF	SKB02N120 P-TO-220-3-45 SKB02N120 1200V P-TO220-3-45 K02N120
k02n120 Abstract: PG-TO-263-3-2 SKB02N120 k02n12 Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,	Original	PDF	SKB02N120 PG-TO-263-3-2 k02n120 PG-TO-263-3-2 SKB02N120 k02n12
K02N120 Abstract: No abstract text available Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs	Original	PDF	SKP02N120 40lower PG-TO-220-3-1 O-220AB) SKP02N120 K02N120
Untitled Abstract: No abstract text available Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation  Short circuit withstand time – 10 s	Original	PDF	SKP02N120 40lower PG-TO-220-3-1 O-220AB)