K 351 TRANSISTOR Search Results

49nF

Contextual Info: Standard Power MOSFETs BUZ 351 File No. 2266 N-Channel Enhancement-Mode Power Field-Effect Transistors 11.5 A, 400 V rDS<on = 0.4 fi N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited m Nanosecond switching speeds m Linear transfer characteristics

IC 351

Abstract: CIL351 CIL352
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 351 CIL 352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 351 CIL 352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO

CIL351

Abstract: CIL352
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CIL 351 CIL 352 TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

Contextual Info: DTC124XK NPN Digital Transistor -I 1 U with built-in bias resistor. This allows inverter circuit con­ figuration without external resistors for input. - 3 - 0 .1 5 - The pin configuration is the following: 1 = Collector/OUT 1 .8+0-2 i 2 = Base/IN 3 = Emitter/GND

npntransistor

Abstract: BFX62
Contextual Info: BFX 62 Nicht für N euentw icklung N P N -Transisto r für regelbare V erstärker und O szillatorstufen bis 1 G H z B FX 62 ist ein NPN-Silizium-Planar-HF-Transistor im Gehäuse 18A4 DIN 41 876 TO -7 2 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert.

Contextual Info: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.

transistor 373

Abstract: 8060 transistor
Contextual Info: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe

MRA0610-40A

Abstract: IC 555 datasheet of ic 555 RF NPN POWER TRANSISTOR 2.5 GHZ MRA0610-18A MRA transistor
Contextual Info: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-40A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.

MRA transistor

Contextual Info: 0610-09 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-09 is Designed for Class C, Common Base Applications in the 600 MHz to 1000 MHz Frequency Range. FEATURES INCLUDE: • Gold Metalization • Input Matching • Emitter Ballasting PACKAGE STYLE MRA .25

MRA0610-18A

Abstract: MRA transistor
Contextual Info: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.

Contextual Info: MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications from 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors.

k 351 transistor

Abstract: MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR
Contextual Info: N AMER PH ILIPS/DISCRETE ObE D bbS3T31 0Q1S70M 1 X BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. A lso suitable as r.f. amplifier and oscillator in f.m. tuners.

VEB mikroelektronik

Abstract: E355D D410D mikroelektronik DDR E351D DDR Schaltkreise Transistoren DDR E412D elektronik DDR E345D
Contextual Info: ^ o n ij- c B ip o la r e reise Bipolare digitale Schaltkreise Dekoder, Treiber, Timer Inhaltsverzeichnis Seite Typenübersicht 5 Kurzzeichenübersicht 6 Technische Erläuterungen 7 - Zuverlässigkeit 8 - Definitionen 9 - G renz- und Betriebswerte 12 - Einbau- und Lötvorschriften

0550E

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT455 ISSUE 1 - SEPT 93_ FEATURES * 140 Volt VCE0 * 1 Am p continuous current * Ptot= 1 Watt REFER TO ZTX455 FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage

smd rgs

Abstract: ld smd transistor smd 2U SMD Transistor nc KUK7607-55B
Contextual Info: Transistors IC SMD Type TrenchMOSTM standard level FET KUK7607-55B TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Standard level compatible. 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2

lc 3101

Abstract: k 351 transistor 2sd darlington L001 transistor Mu
Contextual Info: 2SD1889 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) 2SD1889 (TO-220FP) 10.0 • damper diode is incorporated • built-in resistors between base and

14d 431K varistor

Abstract: 10d 431K Varistor 20d 391K varistor 10d 471k 14D 391K 14D 471K 14d 151K varistor 07d 391k VARISTOR MVR 14d 390k
Contextual Info: MVR Series Metal Oxide Varistors Description MERITEK FEATURES • • • • Fast response to rapidly rising surge voltage High performance clamping voltage characteristics Operating / storage temperature: -40 ~ +85°C / -40 ~ +125°C Varistor voltage: 18V to 1800 V

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 70 L • N channel • Enhancement mode • Avalanche-rated • Logic Level Type ^DS Id ^DS on Package 1> Ordering Code BUZ 70 L 60 V 12 A 0.15 Q TO-220 AB C67078-S1325-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 "C

Contextual Info: Transistors Digital transistors built-in resistors DTA143ZE/DTA143ZU A/DTA143ZKA/DTA143ZSA •Structure PNP digital transistor (with built-in resistors) •External dimensions (Units: mm) DTA143ZE 1 .6 + 0-2 1 0 1 0 ': n tæ 9+0.1 r C .7±0.1 I— 5+0.1

MJ11032

Abstract: MJ110xx MJ11028-29 Transistor power amp transistors mj11033 TRANSISTOR MJ11028 and/transistor MJ11032
Contextual Info: NPN MJ11028, MJ11030, MJ11032 (PNP) MJ11029, MJ11033 High−Current Complementary Silicon Power Transistors http://onsemi.com . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − • • •

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

BFY 34 transistor

Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.